TP07L SUTEX | Alldatasheet
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Technical content
SUPERTEX INC 35— D M™@ 8773295 0002191 O MBSTX | Gj supertex ince. — an ial oe vaetads Low Threshold Objective ® P-Channel Enhancement-Mode T39-17 Vertical DMOS FETs
Ordering Information
BVps3/ Tororo Vosan ‘Order Number / Package Boas (miny (max) TO-92 DICEt [2v | soa [asa [tev | trooena | TRo702N0 at waval sroring availa Features Low Threshold DMOS Technology Low threshold —1.0V max These low threshold enhancement-mode (normally-off) power _ 5 transistors utilize a vertical DMOS structure and Supertex's well- On resistance guaranteed at Vas = 2, 3, and 5 volts proven silicon-gate manufacturing process. This combination <High input impedance produces devices with the power handling capabilities of bipolar «war _ transistors and with the high input impedance and positive Low input capacitance —130 pF typical temperature coetticient inherent in MOS devices. Characteristic © Fast switching speeds of all MOS structures, these devices are free from thermal © Low on resistance runaway and thermally induced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally ‘suited to awide [Free from secondary breakdown range of switching and amplifying applications where very low © Low input and output leakage threshold voltage, high breakdown voltage, high input imped- ance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level intertace Package Options (Note 1) = Solid state relays = Battery operated systems Photo voltaic dave Analog switches <= General purpose line driver = Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVoss Tose Drain-to-Gate Voltage BVoos Gate-to-Source Voltage +20V Operating and Storage Temperature -55°C to +150°C . Soldering Temperature* 300°C “Distance of 1 6 mm from case lor 10 seconds. Noto 1: S00 Package Outne section for duce pinuts. 7-61
SUPERTEX INC 35E D M@@ 8773295 0002192 2 MESTX 39_ TPO7L Thermal Characteristics 1-39-17 Ip (continuous)* Power Dissipation @T.= 28°C TOR 5 Ig (continuous) 1s muted by max rated T,. Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [_svmeot [Parameter [win tye [max [unt [7 Gonattions | Gat Threshold Vago i Zero Gate Voltage Drain Current [| t00 fra | Vag = 20V, Veg = 0V A | Vos = 0.8 Max Rating, Vos = OV, Ty= 125°C Static Drain-to-Source | || 100 | Vas = 2V, lp = -30mA Rosjom | ON-State Resistance [|_| 80 | Vos = BV, Ip = 120mA [Ges | tout Capacianco ~*~ ao | | Common Source Output Capacitance [| 70 | 125 | pF Vas = OV, Vos = -20V, f =1MHz [ecm | Tur ON Doty Tine Sidi ida | [rating Diode Forward Voltage Drop [0 Tv [Vos = 0, log = -250mA Notes: 1 AOC parameters 100% tested at 25°C unless othorwide stated. (Pueo test: 200s pulse, 2% duty cyclo.) 2. AIAG paramaters sample tested Switching Waveforms and Test Circuit ov oa Input an u 1 ! NON) (OFF) 1 t DUT. Yoo ay on ! weut | soa me ‘ouput I 1 ' 10% 10% \\ [> + 7-62