TP0620 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Low threshold — -2.4 V max ❏ High input impedance ❏ Low input capacitance — 85pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Package Option Note: See Package Outline section for dimensions. TO-92 S G D

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 -175mA -0.8A 1W 125 170 -175mA -0.8A * ID (continuous) is limited by max rated Tj. TP0620 Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BVDSS -200 VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID = -1.0mA ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/ °CV GS = VDS, ID = -1.0mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating -1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.25 V GS = -5V, VDS = -25V -0.75 V GS = -10V, VDS = -25V RDS(ON) 9.0 15 V GS = -5V, ID = -0.1A 7.0 12 V GS = -10V, ID = -0.2A ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/ °CV GS = -10V, ID = -0.2A GFS Forward Transconductance 100 150 m V DS = -25V, ID = -0.4A CISS Input Capacitance 85 150 COSS Common Source Output Capacitance 30 85 pF CRSS Reverse Transfer Capacitance 10 35 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 ns td(OFF) Turn-OFF Delay Time 20 tf Fall Time 16 VSD Diode Forward Voltage Drop -1.8 V V GS = 0V, ISD = -0.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -0.5A Notes: 2. All A.C. parameters sample tested. VV GS = 0V, ID = -2.0mADrain-to-Source Breakdown Voltage A Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ID = -0.75A RGEN = 25Ω Ω Ω

Typical Performance Curves /K30 /K31/K35/K30/K31/K30/K30/K35/K30 /K32/K2E/K30 /K31/K2E/K30 /K31/K32/K35/K37/K35/K32/K35 /K30 /K54/K4F/K2D/K39/K32 /K4F/K75/K74/K70/K75/K74 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K2D/K32/K2E/K30 /K2D/K31/K2E/K36 /K2D/K31/K2E/K32 /K2D/K30/K2E/K38 /K2D/K30/K2E/K34 /K30 /K30 /K2D/K31/K30 /K2D/K32/K30 /K2D/K33/K30 /K2D/K35/K30 /K2D/K34/K30 /K53/K61/K74/K75/K72/K61/K74/K69/K6F/K6E /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K2D/K31/K2E/K30 /K2D/K30/K2E/K38 /K2D/K30/K2E/K36 /K2D/K30/K2E/K34 /K2D/K30/K2E/K32 /K30 /K30/K2D /K32 /K2D /K34 /K2D /K36 /K2D/K31/K30/K2D/K38 /K2D/K38/K56 /K4D/K61/K78/K69/K6D/K75/K6D /K52/K61/K74/K65/K64 /K53/K61/K66/K65 /K4F/K70/K65/K72/K61/K74/K69/K6E/K67 /K41/K72/K65/K61 /K2D/K31 /K2D/K31/K30/K30/K30 /K2D/K31/K30/K30/K2D/K31/K30 /K2D/K30/K2E/K31 /K2D/K31/K2E/K30 /K2D/K31/K30 /K2D/K30/K2E/K30/K31 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K70/K6F/K6E/K73/K65 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K69/K73/K74/K61/K6E/K63/K65 /K28/K6E/K6F/K72/K6D/K61/K6C/K69/K7A/K65/K64/K29 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K36 /K30/K2E/K34 /K30/K2E/K32 /K30/K2E/K30/K30/K31 /K31/K30 /K30/K2E/K30/K31 /K30/K2E/K31 /K31 /K54/K72/K61/K6E/K73/K63/K6F/K6E/K64/K75/K63/K74/K61/K6E/K63/K65 /K76/K73/K2E /K44/K72/K61/K69/K6E /K43/K75/K72/K72/K65/K6E/K74 /K32/K35/K30 /K32/K30/K30 /K31/K35/K30 /K31/K30/K30 /K35/K30 /K30 /K30 /K2D/K31/K2E/K30 /K2D/K32/K2E/K30 /K50/K6F/K77/K65/K72 /K44/K69/K73/K73/K69/K70/K61/K74/K69/K6F/K6E /K76/K73/K2E /K43/K61/K73/K65 /K54/K65/K6D/K70/K65/K72/K61/K74/K75/K72/K65 /K30 /K54/K4F/K2D/K39/K32 /K28/K44/K43/K29 /K54 /K43 /K3D/K32 /K35 °/K43 /K2D/K38/K56 /K2D/K36/K56 /K2D/K34/K56 /K2D/K36/K56 /K2D/K34/K56 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K56 /K47/K53 /K3D /K2D/K31/K30 /K56 /K47/K53 /K3D /K2D/K31/K30 /K47 /K46/K53 /K28/K73/K69/K65/K6D/K65/K6E/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K54 /K43 /K28 °/K43/K29 /K50 /K44 /K28/K77/K61/K74/K74/K73/K29 /K54 /K41 /K3D /K2D/K35/K35 °/K43 /K56 /K44/K53 /K3D /K2D/K32/K35/K56 /K54 /K41 /K3D /K31/K35/K30 °/K43 /K54 /K41 /K3D/K32 /K35 °/K43 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K74 /K70 /K28/K73/K65/K63/K6F/K6E/K64/K73/K29 /K54/K4F/K2D/K39/K32 /K50 /K44 /K3D/K31 /K57 /K54 /K43 /K3D/K32 /K35 °/K43

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current DSS Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 200 C (picofarads) 0 -10 -20 -30 -40 150 100 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.15 0.9 -2.0 -1.0 1.2 1.1 1.0 0.9 0.8 0.7 -10 1.1 1.05 1.0 0.95 -50 0 50 100 150 T = -55 A TA = 150 T = 25 A f = 1MHz 65 pF 170 pF 1.66 1.33 1.0 0.66 0.33 VDS = -25V BVDSS (normalized) Tj (°C) I D (amperes) BVDSS Variation with Temperature RDS(ON) (ohms) VGS = -5V VGS = -10V Tj (°C) VGS(th) (normalized) RDS(ON) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) V(th) @ -1mA RDS(ON) @ -10V, -0.2A QG (nanocoulombs)VDS (volts) VGS (volts) VDS = -10V VDS = -40V CISS COSS CRSS TP0620 Typical Performance Curves