TP0610T

TP0610T SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. BVDSS /R DS(ON) ID(ON) Order Number/Package BVDGS (max) (min) TO-236AB* -60V 10 Ω -50mA TP0610T *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Gate Source Drain TO-236AB (SOT-23) top view Product marking for SOT-23: T50❋ where ❋ = 2-week alpha date code

Ordering Information

90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V TP0610T Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W SOT-23 -120mA -400mA 0.36W 200 350 -120mA -400mA * ID (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -60 V V GS = 0V, ID = -10µA VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID = -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 6.5 mV/ °CV GS = VDS, ID = -1.0mA IGSS Gate Body Leakage ±10 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -1 µAV GS = 0V, VDS = Max Rating -200 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -50 mA V GS = -4.5V, VDS = -10V RDS(ON) 25 Ω VGS = -4.5V, ID = -25mA 10 Ω VGS = -10V, ID = -0.2A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/ °CV GS = -10V, ID = -0.2A GFS Forward Transconductance 60 m V DS = -10V, ID = -0.1A CISS Input Capacitance 60 COSS Common Source Output Capacitance 30 pF CRSS Reverse Transfer Capacitance 10 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 20 VSD Diode Forward Voltage Drop -2.0 V V GS = 0V, ISD = -0.12A trr Reverse Recovery Time 400 ns V GS = 0V, ISD = -0.4A Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns I D = -0.18A RGEN = 25Ω Switching Waveforms and Test Circuit Ω

-2.0 -1.6 -1.2 -0.8 -0.4 Saturation Characteristics -2.0 -1.6 -1.2 -0.8 -0.4 Maximum Rated Safe Operating Area -0.1 -100 -10-1.0 -0.01 -0.1 -1.0 -0.001 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 Transconductance vs. Drain Current Power Dissipation vs. Temperature 0 15010050 0.5 0.4 0.3 0.2 0.1 1257525 SOT-23 SOT-23 (DC) SOT-23 (pulsed) TA = 25°C 0.5 0.4 0.3 0.2 0.1 -6V -4V -3V -8V -6V -3V -4V -8V TA = -55°C 25°C 125°C SOT-23 TA = 25 °C PD = 0.36W VDS (volts) V DS (volts) ID (amperes) ID (amperes) VGS = -10V VGS = -10V GFS (siemens) ID (amperes) T A (°C) PD (watts) VDS (volts) ID (amperes) tp (seconds) Typical Performance Curves TP0610T

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics GS On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) 0 -10 -20 -30 -40 0- 2 - 4- 6- 8 - 1 0 -2.0 -1.6 -1.2 -0.8 -0.4 -50 0 50 100 150 1.1 1.0 1.2 1.1 1.0 0.9 0.8 0.7 -10 -50 0 50 100 150 35 pF T = -55°CA 25°C f = 1MHz 0.9 1.6 1.4 1.2 1.0 0.8 125°C RDS(ON) (ohms) BVDSS (normalized) Tj (°C) I D (amperes) BVDSS Variation with Temperature VGS = -4.5V VGS = -10V Tj (°C) VGS(th) (normalized) RDS(ON) (normalized) VGS(th) and RDS(ON) Variation with Temperature VGS (volts) ID (amperes) VDS = -25V VGS(th) @ -1mA RDS(ON) @ -10V, -0.5A CISS COSS CRSS QG (nanocoulombs) VGS (volts) VDS (volts) VDS = -10V VDS = -40V 125 pF TP0610T Typical Performance Curves