TP0604 SUTEX | Alldatasheet

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Technical content

Features

❏ Low threshold — -2.4V max. ❏ High input impedance ❏ Low input capacitance — 95pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. TO-92 S G D BVDGS (max) (min) (max) TO-92 SOW-20* -40V 2.0 Ω -2.0A -2.4V TP0604N3 TP0604WG * Same as SO-20 with 300 mil wide body. BVDSS /R DS(ON) ID(ON) VGS(th) Order Number / Package

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 -0.43A -4.2A 1W 125 170 -0.43A -4.2A SOW-20 Refer to Enhancement Mode MOSFET Arrays Section * ID (continuous) is limited by max rated Tj. TP0604 Thermal Characteristics 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS -40 VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID = -1.0mA ∆VGS(th) Change in VGS(th) with Temperature -3.0 -4.5 mV/ °CV GS = VDS, ID = -1.0mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating -1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.4 -0.6 V GS = -5V, VDS = -20V RDS(ON) 2.0 3.5 V GS = -5V, ID = -250mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 1.2 %/ °CV GS = -10V, ID = -1.0A GFS Forward Transconductance 0.4 0.6 V DS = -20V, ID = -1.0A CISS Input Capacitance 95 150 COSS Common Source Output Capacitance 85 120 pF CRSS Reverse Transfer Capacitance 35 60 td(ON) Turn-ON Delay Time 5.0 8 tr Rise Time 7.0 18 td(OFF) Turn-OFF Delay Time 10 15 tf Fall Time 6.0 19 VSD Diode Forward Voltage Drop -1.3 -2.0 V V GS = 0V, ISD = -1.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -1.5A Notes: 2. All A.C. parameters sample tested. VV GS = 0V, ID = -2.0mADrain-to-Source Breakdown Voltage A ΩStatic Drain-to-Source ON-State Resistance VGS = 0V, VDS = -20V f = 1 MHz VDD = -20V ns I D = -1.0A RGEN = 25Ω Electrical Characteristics (@ 25°C unless otherwise specified) Ω

Typical Performance Curves /K4F/K75/K74/K70/K75/K74 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K2D/K35 /K2D/K34 /K2D/K33 /K2D/K32 /K2D/K31 /K30 /K2D/K31/K30 /K2D/K32/K30 /K2D/K33/K30 /K2D/K35/K30 /K2D/K34/K30 /K2D/K39/K56 /K2D/K38/K56 /K2D/K37/K56 /K2D/K36/K56 /K2D/K35/K56 /K2D/K34/K56 /K53/K61/K74/K75/K72/K61/K74/K69/K6F/K6E /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K2D/K35 /K2D/K34 /K2D/K33 /K2D/K32 /K2D/K31 /K30/K2D /K32 /K2D /K34 /K2D /K36 /K2D/K31/K30/K2D/K38 /K2D/K35/K56 /K2D/K37/K56 /K2D/K34/K56 /K2D/K36/K56 /K2D/K38/K56 /K2D/K39/K56 /K4D/K61/K78/K69/K6D/K75/K6D /K52/K61/K74/K65/K64 /K53/K61/K66/K65 /K4F/K70/K65/K72/K61/K74/K69/K6E/K67 /K41/K72/K65/K61 /K2D/K30/K2E/K31 /K2D/K31/K30/K30 /K2D/K31/K30/K2D/K31 /K2D/K30/K2E/K31 /K2D/K31/K2E/K30 /K2D/K31/K30 /K54/K4F/K2D/K39/K32 /K28/K44/K43/K29 /K54 /K43 /K3D/K32 /K35 °/K43 /K2D/K30/K2E/K30/K31 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49/K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49/K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K49/K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K70/K6F/K6E/K73/K65 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K69/K73/K74/K61/K6E/K63/K65 /K28/K6E/K6F/K72/K6D/K61/K6C/K69/K7A/K65/K64/K29 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K36 /K30/K2E/K34 /K30/K2E/K32 /K30/K2E/K30/K30/K31 /K31/K30 /K30/K2E/K30/K31 /K30/K2E/K31 /K31 /K74/K70 /K28/K73/K65/K63/K6F/K6E/K64/K73/K29 /K54/K72/K61/K6E/K73/K63/K6F/K6E/K64/K75/K63/K74/K61/K6E/K63/K65 /K76/K73/K2E /K44/K72/K61/K69/K6E /K43/K75/K72/K72/K65/K6E/K74 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K36 /K30/K2E/K34 /K30/K2E/K32 /K30 /K30/K2D /K31 /K2D /K32 /K2D /K33 /K47 /K46/K53 /K28/K73/K69/K65/K6D/K65/K6E/K73/K29 /K49/K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K50/K6F/K77/K65/K72 /K44/K69/K73/K73/K69/K70/K61/K74/K69/K6F/K6E /K76/K73/K2E /K43/K61/K73/K65 /K54/K65/K6D/K70/K65/K72/K61/K74/K75/K72/K65 /K30 /K31/K35/K30/K31/K30/K30/K35/K30 /K32/K2E/K30 /K31/K2E/K30 /K54/K4F/K2D/K39/K32 /K31/K32/K35/K37/K35/K32/K35 /K54 /K43 /K28 °/K43/K29 /K50 /K44 /K28/K77/K61/K74/K74/K73/K29 /K56 /K44/K53 /K3D /K2D/K32/K35/K56 /K56 /K47/K53 /K3D /K2D/K31/K30/K56 /K56 /K47/K53 /K3D /K2D/K31/K30/K56 /K30 /K30 /K30 /K30 /K54/K4F/K2D/K39/K32 /K50 /K44 /K3D/K31 /K57 /K54 /K43 /K3D/K32 /K35 °/K43 /K54 /K41 /K3D /K2D/K35/K35 °/K43 /K54 /K41 /K3D/K32 /K35 °/K43 /K54 /K41 /K3D /K31/K35/K30 °/K43

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TP0604 Typical Performance Curves Gate Drive Dynamic Characteristics –10 QG (nanocoulombs) 180 pF 75 pF VGS (volts) VDS = -10V VDS = -40V 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 2.0 0.8 1.6 0.4 1.2 Tj (°C) VGS(th) (normalized) RDS(ON) (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. Drain Current 7.5 6.0 5.0 3.0 1.5 0- 1- 2 - 3 - 5 -4 RDS(ON) (ohms) VGS = -5V V GS = -10V 1.1 1.0 0.9 -50 0 50 100 150 BVDSS (normalized) Tj (°C) Transfer Characteristics --5 0- 2- 4 - 6 -10-8 VGS (volts) ID (amperes) VDS = -25V T = -55 A TA = 150 Capacitance vs. Drain-to-Source Voltage 200 150 100 0 -10 -20 -30 -40 C (picofarads) f = 1MHz CISS COSS CRSS VDS (volts) ID (amperes) BVDSS Variation with Temperature T = 25 A V(th) @ -1mA RDS(ON) @ -10V, -1.0A