TN5335 SUTEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

❏ Low threshold – 2.0V max. ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches ❏ Modem hook switches Package Options Note: See Package Outline section for dimensions. Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. TO-243AA (SOT-89) G D S D Low Threshold Product marking for TO-243AA Where ❋ = 2-week alpha date code TN3S❋

Ordering Information

BVDSS /R DS(ON) VGS(th) ID(ON) BVDGS (max) (max) (min) TO-236AB TO-243AA* Wafer 350V 15 Ω 2.0V 750mA TN5335K1 TN5335N8 TN5335NW * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Order Number / Package TO-236AB (SOT-23) top view Product marking for SOT-23 Where ❋ = 2-week alpha date code N3S❋ S D G

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TN5335 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Thermal Characteristics Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-236AB 110mA 800mA 0.36W 200 350 110mA 800mA TO-243AA 230mA 1.3A 1.6W † 15 78 † 230mA 1.3A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 350 V V GS = 0V, ID = 100µA VGS(th) Gate Threshold Voltage 0.6 2.0 V V GS = VDS, ID= 1mA ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/ °CV GS = VDS, ID= 1mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1.0 µAV GS = 0V, VDS = 100V 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C 5.0 nA V GS = 0V, VDS = 330V ID(ON) ON-State Drain Current 300 V GS = 4.5V, VDS = 25V 750 mA VGS = 10V, VDS = 25V RDS(ON) Static Drain-to Source 15 V GS = 3.0V, ID = 20mA On-State Resistance 15 Ω VGS = 4.5V, ID = 150mA

15 V GS = 10V, ID = 200mA

∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/ °CV GS = 4.5V, ID = 150mA GFS Forward Transconductance 125 m V DS = 25V, ID = 200mA CISS Input Capacitance 110 VGS = 0V, VDS = 25VCOSS Common Source Output Capacitance 60 pF f = 1MhzCRSS Reverse Transfer Capacitance 22 td(ON) Turn-ON Delay Time 20 V DD = 25V, tr Rise Time 15 ns ID = 150mA, td(OFF) Turn-OFF Delay Time 25 R GEN = 25Ω tf Fall Time 25 VSD Diode Forward Voltage Drop 1.8 V V GS = 0V, ISD = 200mA trr Reverse Recovery Time 800 ns V GS = 0V, ISD = 200mA Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Ω