TN2640

TN2640 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Low threshold — 2.0V max. ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Options Note: See Package Outline section for dimensions. BVDSS /R DS(ON) VGS(th) ID(ON) BVDGS (max) (max) (min) SO-8 TO-92 DPAK Die † 400V 5.0 Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640K4 TN2640ND † MIL visual screening available.

Ordering Information

S G D D D D G S D (TAB) TO-252 (D-PAK)

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 220mA 2.0A 1.0W 125 170 220mA 2.0A SO-8 260mA 2.0A 1.3W † 24 96 † 260mA 2.0A DPAK 500mA 3.0A 2.5W † 6.25 50 500mA 3.0A * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Thermal Characteristics 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS 400 V V GS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 0.8 2.0 V V GS = VDS, ID= 2.0mA ∆VGS(th) Change in VGS(th) with Temperature -2.5 -4.0 mV/ °CV GS = VDS, ID= 2.0mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 1.5 3.5 V GS = 5.0V, VDS = 25V 2.0 4.0 V GS = 10V, VDS = 25V RDS(ON) 3.2 5.0 V GS = 4.5V, ID = 500mA 3.0 5.0 V GS = 10V, ID = 500mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = 10V, ID = 500mA GFS Forward Transconductance 200 330 m V DS = 25V, ID = 100mA CISS Input Capacitance 180 225 COSS Common Source Output Capacitance 35 70 pF CRSS Reverse Transfer Capacitance 7.0 25 td(ON) Turn-ON Delay Time 4.0 15 tr Rise Time 15 20 td(OFF) Turn-OFF Delay Time 20 25 tf Fall Time 22 27 VSD Diode Forward Voltage Drop 0.9 V V GS = 0V, ISD = 200mA trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1.0A Notes: 2. All A.C. parameters sample tested. A Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage VGS = 0V, VDS = 25V f = 1.0 MHz VDD = 25V, ID = 2.0A, RGEN = 25Ω ns Static Drain-to-Source ON-State Resistance Ω Ω

Typical Performance Curves Output Characteristics 5.0 4.0 3.0 2.0 1.0 VDS (volts) ID (amperes) ID (amperes) Saturation Characteristics VDS (volts) Maximum Rated Safe Operating Area 0 100010010 1.0 0.1 0.01 0.001 VDS (volts) ID (amperes) Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 2.0 1.6 1.2 0.8 0.4 0 2.01.0 GFS (siemens) ID (amperes)D Power Dissipation vs. Temperature 0 15010050 3.0 2.4 1.8 1.2 0.6 1257525 TC (°C) PD (watts) TO-92 TC = 25 °C PD = 1.0W SO-8 TO-92 TA = -55°C VDS = 25V 0 10 20 30 50 40 0246 1 0 8 25°C 125°C 3.0 5.0 4.0 2.5 2.0 1.5 1.0 0.5 VGS = 10V TO-92 (pulsed) TC = 25°C TO-92 (DC) SO-8 (DC) VGS = 10V SO-8 (pulsed) DPAK DPAK (DC)

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 12/19/01rev.1 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics QG (nanocoulombs) VGS (volts) Tj (°C) VGS(th) (normalized) RDS(ON) (normalized) VTH and RDS Variation with Temperature On-Resistance vs. Drain Current RDS(ON) (ohms) BVDSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 400 C (picofarads) VDS (volts) ID (amperes) BVDSS Variation with Temperature 01 02 0 3 0 4 0 200 300 100 02468 1 0 3.0 2.4 1.8 1.2 0.6 -50 0 50 100 150 1.15 1.10 1.05 1.00 0.95 0.90 1.4 1.2 1.0 0.8 0.6 0.4 012 3 45 -50 0 50 100 150 253pF VDS = 10V VDS = 40V 653pF VGS = 10V VGS = 5V 125°C f = 1MHz CISS COSS CRSS 0.9 2.2 1.8 1.4 1.0 0.6 0.2 25°C TA = -55°C VDS = 25V V(th) @ 2mA RDS(ON)@ 10V, 0.5A Typical Performance Curves