TN2524 SUTEX | Alldatasheet

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Technical content

Features

❏ Low threshold — 2.0V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transis- tors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. TN2524 Low Threshold Package Option N-Channel Enhancement-Mode Vertical DMOS FETs

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. TO-243AA (SOT-89) G D S D Order Number / PackageBVDSS /R DS(ON) VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die † 240V 6.0 Ω 2.0V 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available.

Ordering Information

Product marking for TO-243AA Where ❋ = 2-week alpha date code TN5C❋

Symbol Parameter Min Typ Max Unit Conditions BVDSS

240 V V GS = 0V, ID = 2mA

VGS(th) Gate Threshold Voltage 0.6 2.0 V V GS = VDS, ID= 1mA ∆VGS(th) Change in VGS(th) with Temperature -5.0 mV/ °CV GS = VDS, ID= 1mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.5 1.9 V GS = 4.5V, VDS = 25V 1.0 2.8 V GS = 10V, VDS = 25V RDS(ON) 4.0 6.0 V GS = 4.5V, ID = 250mA 4.0 6.0 V GS = 10V, ID = 0.5A ∆RDS(ON) Change in RDS(ON) with Temperature 1.4 %/ °CV GS = 10V, ID = 0.5A GFS Forward Transconductance 300 600 m V DS = 25V, ID = 0.5A CISS Input Capacitance 65 125 COSS Common Source Output Capacitance 35 70 pF CRSS Reverse Transfer Capacitance 10 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.8 V V GS = 0V, ISD = 1.0A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1.0A Notes: 2.All A.C. parameters sample tested. A Thermal Characteristics Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W * ID (continuous) is limited by max rated T j. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance V GS = 0V, VDS = 25V f = 1 MHz 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit VDD = 25V, ns I D = 1.0A, RGEN = 25Ω Ω Ω

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1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TN2524 Typical Performance Curves Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) V DS(th) and R Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 200 C (picofarads) VDS (volts) I BV 01 0 2 03 04 0 150 100 02468 1 0 3.0 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 150 1.1 1.0 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 63pF VDS = 40V VDS = 10V VGS = 4.5V VGS = 10V T = -55°CA VDS = 25V 150°C 0123 5 4 f = 1MHz CISS COSS CRSS 0.9 150 pF 2.4 2.0 1.6 1.2 0.8 0.4 (th)V @ 1mA RDS(ON) @ 10V, 0.5A 25°C