TN2510 SUTEX | Alldatasheet

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Technical content

Features

❏ Low threshold —2.0V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Note: See Package Outline section for dimensions. TO-243AA (SOT-89) G D S D Product marking for TO-243AA: Where ❋ = 2-week alpha date code TN5A❋

90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Thermal Characteristics Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS

100 V V GS = 0V, ID = 2mA

VGS(th) Gate Threshold Voltage 0.6 2.0 V V GS = VDS, ID= 1mA ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/ °CV GS = VDS, ID= 1.0mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 1.2 2.0 V GS = 5.0V, VDS = 25V 3.0 6.0 V GS = 10V, VDS = 25V RDS(ON) 15 V GS = 3.0V, ID = 250mA 1.5 2.0 Ω VGS = 4.5V, ID = 750mA 1.0 1.5 V GS = 10V, ID = 750mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = 10V, ID = 750mA GFS Forward Transconductance 0.4 0.8 V DS = 25V, ID = 1.0A CISS Input Capacitance 70 125 COSS Common Source Output Capacitance 30 70 pF CRSS Reverse Transfer Capacitance 15 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 10 VSD Diode Forward Voltage Drop 1.8 V V GS = 0V, ISD = 1.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1.5A Notes: 2. All A.C. parameters sample tested. A Electrical Characteristics (@ 25°C unless otherwise specified) Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance V DD = 25V, ns I D = 1.5A, RGEN = 25Ω VGS = 0V, VDS = 25V f = 1 MHz Ω TN2510

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1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TN2510 Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) V DS(th) and R Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) I BV 01 0 2 03 04 0 02468 1 0 -50 0 50 100 150 1.1 1.0 1.2 1.1 1.0 0.9 0.8 -50 0 50 100 150 70pF VDS = 40V VDS = 10V VGS = 5V VGS = 10V T = -55°CAVGS = 25V 125°C 0246 1 0 8 f = 1MHz CISS COSS CRSS 0.9 190 pF 2.0 1.6 1.2 0.8 0.4 (th)V @ 1mA RDS(ON) @ 5V, 0.75A 25°C Typical Performance Curves