TN2501 SUTEX | Alldatasheet

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Technical content

Features

❏ Low threshold ❏ High input impedance ❏ Low input capacitance — 110pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 15V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C *Distance of 1.6 mm from case for 10 seconds.

Ordering Information

Note: See Package Outline section for dimensions. TN2501 TO-243AA (SOT-89) G D S D Product marking for TO-243AA: Where ❋ = 2-week alpha date code TN5U❋

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-243AA 400mA 560mA 1.6W † 15 78 † 560mA 750mA * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 18 V V GS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 0.3 1.0 V V GS = VDS, ID= 1.0mA ∆VGS(th) Change in VGS(th) with Temperature -4.0 mV/ °CV GS = VDS, ID= 1.0mA IGSS Gate Body Leakage 100 nA V GS = ± 15V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 250 600 mA V GS = VDS = 3.0V RDS(ON) 25 V GS = 1.2V, ID = 3.0mA 3.5 Ω VGS = 2.0V, ID = 50mA 2.5 V GS = 3.0V, ID = 200mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = 3.0V, ID = 200mA GFS Forward Transconductance 0.15 0.3 V DS = 3.0V, ID = 200mA CISS Input Capacitance 110 COSS Common Source Output Capacitance 60 pF CRSS Reverse Transfer Capacitance 35 td(ON) Turn-ON Delay Time 5.0 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 8.0 VSD Diode Forward Voltage Drop 1.1 1.8 V V GS = 0V, ISD = 200mA trr Reverse Recovery Time 100 ns V GS = 0V, ISD = 200mA Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance VDD = 15V, ID = 250mA, RGEN = 25Ω VGS = 0V, VDS = 15V f = 1 MHz ns Ω TN2501

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1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) VGS(th) (normalized) RDS(ON) (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. ID (ohms)DS(ON)R BVDSS (normalized) Tj (°C) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) ID (amperes) BVDSS Variation with Temperature 05 1 0 15 20 02468 1 0 -50 0 50 100 150 1.1 1.0 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 60pF VDS = 15V VDS = 10V VGS = 2V VGS = 3V f = 1MHz CISS COSS CRSS 0.9 130 pF 1.6 1.4 1.2 1.0 0.8 0.6 V(th) @ 1mA RDS(ON) @ 3V, 0.2A 1.0 0.8 0.6 0.4 0.2 TA = -55°C VDS = 15V 25°C 125°C Typical Performance Curves TN2501