TN2435_09 SUTEX | Alldatasheet

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Technical content

Features

Free from secondary breakdown Low input and output leakage

Applications

Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. N-Channel Enhancement-Mode Vertical DMOS FET Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Soldering temperature* 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds.

Ordering Information

Package Option BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (A)TO-243AA (SOT-89) TN2435 TN2435N8-G 350 6.0 1.0 -G indicates package is RoHS compliant (‘Green’) Pin Configuration TO-243AA (SOT-89) (N8) Product Marking TO-243AA (SOT-89) (N8) TN4SW W = Code for week sealed = “Green” Packagin g GATE SOURCE DRAIN DRAIN Package may or may not include the following marks: Si or

  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 350 - - V VGS = 0V, ID = 250µA VGS(th) Gate threshold voltage 0.8 - 2.5 V VGS = VDS, ID= 1.0mA ΔVGS(th) Change in VGS(th) with temperature - - -5.5 mV/OC VGS = VDS, ID= 1.0mA IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V IDSS Zero gate voltage drain current - - 10 µA VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state drain current 0.5 - - A VGS = 4.5V, VDS = 25V 1.0 - - VGS = 10V, VDS = 25V RDS(ON) Static drain-to-source on-state resistance - - 15 Ω VGS = 3.0V, ID = 150mA - - 10 VGS = 4.5V, ID = 250mA - - 6.0 VGS = 10V, ID = 750mA ΔRDS(ON) Change in RDS(ON) with temperature - - 1.7 %/OC VGS = 10V, ID = 750mA GFS Forward transductance 125 - - mmho VDS = 20V, ID = 350mA CISS Input capacitance - 125 200 pF VGS = 0V, VDS = 25V, f = 1.0MHz COSS Common source output capacitance - 25 70 CRSS Reverse transfer capacitance - 8.0 25 td(ON) Turn-on delay time - 5.0 20 ns VDD = 25V, ID = 750mA, RGEN = 25Ω tr Rise time - 10 20 td(OFF) Turn-off delay time - 28 40 tf Fall time - 10 30 VSD Diode forward voltage drop - - 1.5 V VGS = 0V, ISD = 750mA trr Reverse recovery time - 300 - ns VGS = 0V, ISD = 750mA Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. Notes: † ID (continuous) is limited by max rated Tj . ‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Thermal Characteristics Package ID (continuous)† (mA) ID (pulsed) (A) Power Dissipation @TA = 25OC (W) θjc (OC/W) θja (OC/W) IDR (mA) IDRM (A) TO-243AA (SOT-89) 365 1.8 1.6‡ 15 78‡ 365 1.8 Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD RGEN
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves 0.0 0.2 0.4 0.6 0.8 1.0 VDS =15V TA=125 OC TA=25 OC TA=-55 OC 0 25 50 7 5 100 125 150 0.0 0.5 1.0 1.5 2.0 ID (Amperes) VDS (Volts) VGS = 10V Output Characteristics 2.5V Saturation Characteristics ID (Amperes) VDS (Volts) VGS = 10V 2.5V GFS (siemens) ID (Amperes) Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature PD (Watts) TA (OC) Maximum Rated Safe Operating Area ID (amperes) VDS (Volts) Thermal Response Characteristics Thermal Resistance (normalized) tp (seconds) 8V 5V 1 100010010 1.0 0.1 0.01 0.001 TO-243AA (DC) TO-243AA (pulsed) 1.0 0.8 0.6 0.4 0.2 0.001 100.01 0.1 1.0 TO-243AA PD = 1.6W TC = 25 OC 0 10 20 30 40 5 0 1.0 2.0 3.0 2.5 1.5 0.5 0 2 4 6 8 1 0 0.0 0.4 0.8 1.2 1.6 2.0 TO-243AA TA=25 OC
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves (cont.) R )NO(SD )smho( ID (Amperes) On Resistance vs. Drain Current VGS(TH) and RDS(ON) w/ Temperature V )ht(SG )dezilamron( TJ (°C) R )NO(SD )dezilamron( Transfer Characteristics ID )serepmA( VGS (Volts) -50 0 50 100 1 50 0.8 0.9 1.0 1.1 1.2 BV @ 250µA 0 2 4 6 8 1 0 0.0 0.4 0.8 1.2 1.6 2.0 TA = -55°C TA = 150°C TA = 25°C VDS = 25V 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 0.4 0.8 1.2 1.6 2.0 2.4 RDS(ON) @ 10V, 0.75A VGS(th) @ 1mA 0 10 2 0 30 40 5 0 150 225 300 CRSS COSS CISS f = 1MHz VDS=10V VDS=40V ID = 365mA VB SSD )dezilamroN( TJ (°C) BVDSS Variation with Temperature Capacitance vs. Drain Source Voltage C )sdarafocip( VDS (Volts) 525pF 150pF Gate Drive Dynamic Characteristics Q (nanocoulombs)G V SG )stlov( VGS = 4.5V VGS = 10V VGS = 3V

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications ©2009 All rights reserved. Unauthorized use or reproduction is prohibited .

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com TN2435 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2435 A051109 3-Lead TO-243AA (SOT-89) Package Outline (N8) Symbol A b b1 C D D1 E E1 e e1 H L Dimensions (mm) 1.50 BSC 3.00 BSC 3.94 0.89 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version D070908. b b1