TN2435

TN2435 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transis- tors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Option N-Channel Enhancement-Mode Vertical DMOS FETs

Applications

❏ Logic level interfaces ❏ Solid state relays ❏ Power Management ❏ Analog switches ❏ Ringers ❏ Telecom switches Note: See Package Outline section for dimensions. * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. ** Die in wafer form. Order Number / PackageBVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-243AA* Die** 350V 6.0 Ω 1.0A TN2435N8 TN2435NW

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Low Threshold Product marking for TO-243AA: TN4D❋ where ❋ = 2-week alpha date code TO-243AA (SOT-89) G D S D

90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 350 V V GS = 0V, ID = 250µA VGS(th) Gate Threshold Voltage 0.8 V V GS = VDS, ID= 1.0mA ∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/ °CV GS = VDS, ID= 1.0mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.5 A VGS = 4.5V, VDS = 25V

1.0 V GS = 10V, VDS = 25V

RDS(ON) Static Drain-to Source ON-State 15.0 V GS = 3.0V, ID = 150mA Resistance 10.0 Ω VGS = 4.5V, ID = 250mA

6.0 V GS = 10V, ID = 750mA

∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/ °CV GS = 10V, ID = 750mA GFS Forward Transconductance 125 m V DS = 25V, ID = 350mA CISS Input Capacitance 125 200 VGS = 0V, VDS = 25VCOSS Common Source Output Capacitance 25 70 pF f = 1.0MHzCRSS Reverse Transfer Capacitance 8 25 td(ON) Turn-ON Delay Time 5 20 tr Rise Time 10 20 ns td(OFF) Turn-OFF Delay Time 28 40 tf Fall Time 10 30 VSD Diode Forward Voltage Drop 1.5 V V GS = 0V, ISD = 750mA trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 750mA Notes: 2.All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 25V, ID = 750mA RGEN = 25Ω Ω Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-243AA 365mA 1.8A 1.6W † 15 78 † 365mA 1.8A * ID (continuous) is limited by max rated T j. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate.

Typical Performance Curves 0.0 0.2 0.4 0.6 0.8 1.0 VDS =15V TA=125 °C TA=25 °C TA=-55 °C 02 5 5 07 5 100 125 150 0.0 0.5 1.0 1.5 2.0 ID (Amperes) VDS (Volts) VGS = 10V Output Characteristics 2.5V Saturation Characteristics ID (Amperes) VDS (Volts) VGS = 10V 2.5V GFS (siemens) ID (Amperes) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature PD (Watts) TC (°C) Maximum Rated Safe Operating Area ID (amperes) VDS (Volts) Thermal Response Characteristics Thermal Resistance (normalized) tp (seconds) 8V 5V 1 100010010 1.0 0.1 0.01 0.001 TO-243AA (DC) TO-243AA (pulsed) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 TO-243AA PD = 1.6W TC = 25 °C 01 0 2 03 04 05 0 1.0 2.0 3.0 2.5 1.5 0.5 02468 1 0 0.0 0.4 0.8 1.2 1.6 2.0 TO-243AA TA=25 °C

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TN2435 Typical Performance Curves RDS(ON) (ohms) ID (Amperes) On Resistance vs. Drain Current VGS(TH) and RDS(ON) w/ Temperature VGS(th) (normalized) TJ (°C) RDS(ON) (normalized) Transfer Characteristics ID (Amperes) VGS (Volts) -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 BV @ 250µA 02468 1 0 0.0 0.4 0.8 1.2 1.6 2.0 TA = -55°C TA = 150°C TA = 25°C VDS = 25V 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 0.4 0.8 1.2 1.6 2.0 2.4 RDS(ON) @ 10V, 0.75A VGS(th) @ 1mA 01 0 2 03 04 05 0 150 225 300 CRSS COSS CISS f = 1MHz VDS=10V VDS=40V ID = 365mA BVDSS (Normalized) TJ (°C) BVDSS Variation with Temperature Capacitance vs. Drain Source Voltage C (picofarads) VDS (Volts) 525pF 150pF Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) VGS = 4.5V VGS = 10V VGS = 3V