TN2425

TN2425 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Low threshold ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transis- tors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Option N-Channel Enhancement-Mode Vertical DMOS FETs

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. TO-243AA (SOT-89) G D S D * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Order Number / PackageBVDSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-243AA* DIE 250V 3.5 Ω 1.5A TN2425N8 TN2425ND

Ordering Information

Product marking for TO-243AA: TN4C❋ where ❋ = 2-week alpha date code

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-243AA 480mA 1.9A 1.6W † 15 78 † 480mA 1.9A * ID (continuous) is limited by max rated T j. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 250 V V GS = 0V, ID = 250µA VGS(th) Gate Threshold Voltage 0.8 V V GS = VDS, ID= 1.0mA ∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/ °CV GS = VDS, ID= 1.0mA IGSS Gate Body Leakage 100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.8 A VGS = 4.5V, VDS = 25V

1.5 V GS = 10V, VDS = 25V

RDS(ON) Static Drain-to-Source ON-State 6.0 V GS = 3.0V, ID = 150mA Resistance 5.0 Ω VGS = 4.5V, ID = 250mA 3.5 V GS = 10V, ID = 0.5A ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/ °CV GS = 10V, ID = 0.5A GFS Forward Transconductance 500 m V DS = 25V, ID = 250mA CISS Input Capacitance 105 200 VGS = 0V, VDS = 25VCOSS Common Source Output Capacitance 25 100 pF f = 1.0MHzCRSS Reverse Transfer Capacitance 7 40 td(ON) Turn-ON Delay Time 5 15 tr Rise Time 10 25 ns td(OFF) Turn-OFF Delay Time 25 35 tf Fall Time 5 15 VSD Diode Forward Voltage Drop 1.5 V V GS = 0V, ISD = 500mA trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 500mA Notes: 2.All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 25V, ID = 500mA RGEN = 25Ω Ω

Typical Performance Curves 0.0 0.2 0.4 0.6 0.8 1.0 ID (Amperes) VDS (Volts) VGS = 10V Output Characteristics 2.5V Saturation Characteristics ID (Amperes) VDS (Volts) VGS = 10V 2.5V GFS (siemens) ID (Amperes) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature PD (Watts) TC (°C) Maximum Rated Safe Operating Area ID (amperes) VDS (Volts) Thermal Response Characteristics Thermal Resistance (normalized) tp (seconds) 01 0 2 0 3 04 05 0 02468 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 02 5 5 0 7 5 100 125 150 0.0 0.5 1.0 1.5 2.0 1 100010010 1.0 0.1 0.01 0.001 TO-243AA (DC) TO-243AA (pulsed) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 TO-243AA PD = 1.6W TC = 25 °C VDS =15V TA=125 °C TA=25 °C TA=-55 °C TO-243AA TA=25 °C

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. TN2425 Typical Performance Curves RDS(ON) (ohms) ID (Amperes) On Resistance vs. Drain Current VGS(TH) and RDS(ON) w/ Temperature VGS(th) (normalized) TJ (°C) RDS(ON) (normalized) Transfer Characteristics ID (Amperes) VGS (Volts) 02468 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS = 25V TA = -55°C TA = 125°C TA = 25°C -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.6 0.9 1.2 1.5 1.8 RDS(ON) @ 10V, 0.5A VGS(th) @ 1mA 01 0 2 0 3 04 05 0 100 150 200 CRSS COSS CISS f = 1MHz ID = 480mA VDS=10V VDS=40V -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 BV @ 250µA 453pF 128pF BVDSS (Normalized) TJ (°C) BVDSS Variation with Temperature Capacitance vs. Drain Source Voltage C (picofarads) VDS (Volts) Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) 012345 VGS = 4.5V VGS = 10V