TN2130 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain

Applications

❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Product marking for SOT-23: N1T❋ where ❋ = 2-week alpha date code Gate Source Drain TO-236AB (SOT-23) top view Low Threshold

Ordering Information

Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 300 V I D = 1mA, VGS = 0V VGS(th) Gate Threshold Voltage 0.8 2.4 V V GS = VDS, ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/ °CI D = 1mA, VGS = VDS IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 100 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 250 mA V GS = 10V, VDS = 25V RDS(ON) Static Drain-to-Source ON-State Resistance 25 Ω VGS = 4.5V, ID = 120mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/ °CV GS = 4.5V, ID = 120mA GFS Forward Transconductance 250 m V DS = 25V, ID = 100mA CISS Input Capacitance 50 COSS Common Source Output Capacitance 15 pF V GS = 0V, VDS = 25V, f = 1MHz CRSS Reverse Transfer Capacitance 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 7 td(OFF) Turn-OFF Delay Time 12 tf Fall Time 15 VSD Diode Forward Voltage Drop 1.8 V I SD = 120mA, VGS = 0V trr Reverse Recovery Time 400 ns I SD = 120mA, VGS = 0V Notes: 2. All A.C. parameters sample tested. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-236AB 85mA 200mA 0.36W 200 350 85mA 200mA * ID (continuous) is limited by max rated Tj. Thermal Characteristics Electrical Characteristics (@ 25°C unless otherwise specified) Switching Waveforms and Test Circuit Ω VDD = 25V, ns I D = 120mA RGEN = 25Ω TN2130

Typical Performance Curves Output Characteristics 1.0 0.8 0.6 0.4 0.2 01 0 2 03 04 05 0 VDS (volts) ID (amperes) Saturation Characteristics 0.5 0.4 0.3 0.2 0.1 0246 1 0 8 VDS (volts) ID (amperes) Maximum Rated Safe Operating Area 0 100010010 0.01 0.1 1.0 0.001 I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 1.0 0.4 0.2 0.8 0.6 0 0.1 0.2 GFS (siements) ID (amperes) VDS (volts) Power Dissipation vs. Temperature 0 15010050 1.0 0.8 0.6 0.4 0.2 1257525 TA (°C) PD (watts) SOT-23 (pulsed) VGS = 10V VGS =10V SOT-23 (DC) SOT-23 0.3 0.5 0.4 VDS VDS = 15V TA = 25 °C SOT-23 TA = 25 °C PD = 0.36W TA = -55 °C 25 °C 125 °C TN2130

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics VGS (volts) Tj(°C) VGS(th) (normalized) RDS(ON) (normalized) VTH and RDS Variation with Temperature On-Resistance vs. Drain Current RDS(ON) (ohms) BVDSS Variation with Temperature BVDSS (normalized) Tj(°C) Transfer Characteristics ID (amperes) Capacitance vs. Drain-to-Source Voltage C (picofarads) ID (amperes) 01 0 2 03 04 0 02468 1 0 -50 0 50 100 150 1.1 1.0 1.2 1.1 1.0 0.9 0.8 -50 0 50 100 150 28pF VDS = 10V VDS = 40V VGS = 4.5V VGS = 10V f = 1MHz 0.9 80 pF 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 1mA RDS(ON) @ 4.5V, 120mA 1.0 0.8 0.6 0.4 0.2 TA = -55°C VDS = 15V 125°C QG (nanocoulombs)VDS (volts) VGS (volts) VDS = 15V CISS COSS CRSS 25°C Typical Performance Curves TN2130