TN2130K1-G SUTEX | Alldatasheet

Document overview

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Technical content

Features

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain

Applications

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo-voltaic drives Analog switches General purpose line drivers Telecom switches Package may or may not include the following marks: Si or

  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 300 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 1.0mA ΔVGS(th) Change in VGS(th) with temperature - - -5.5 mV/OC VGS = VDS, ID = 1.0mA IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V IDSS Zero gate voltage drain current - - 10 µA VGS = 0V, VDS = Max Rating - - 100 VDS = 0.8Max Rating, VGS = 0V, TA = 125OC ID(ON) On-state drain current 250 - - mA VGS = 10V, VDS = 25V RDS(ON) Static drain-to-source on-state resistance - - 25 Ω VGS = 4.5V, ID = 120mA ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 4.5V, ID = 120mA GFS Forward transductance - 250 - mmho VDS = 25V, ID = 100mA CISS Input capacitance - - 50 pF VGS = 0V, VDS = 25V, f = 1.0MHz COSS Common source output capacitance - - 15 CRSS Reverse transfer capacitance - - 5.0 td(ON) Turn-on delay time - - 10 ns VDD = 25V, ID = 120mA, RGEN = 25Ω tr Rise time - - 7.0 td(OFF) Turn-off delay time - - 12 tf Fall time - - 15 VSD Diode forward voltage drop - - 1.8 V VGS = 0V, ISD = 120mA trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 120mA Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. Notes: † ID (continuous) is limited by max rated Tj . Thermal Characteristics Package ID (continuous)† (mA) ID (pulsed) (mA) Power Dissipation @TA = 25OC (W) θjc (OC/W) θjA (OC/W) IDR (mA) IDRM (mA) TO-236AB (SOT-23) 85 200 0.36 200 350 85 200 Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD RGEN
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves Output Characteristics 1.0 0.8 0.6 0.4 0.2 0 10 20 30 40 5 0 VDS (volts) ID )serepma( Saturation Characteristics 0.5 0.4 0.3 0.2 0.1 0 2 4 6 108 VDS (volts) ID )serepma( Maximum Rated Safe Operating Area 0 100010010 0.01 0.1 1.0 0.001 I )serepma(D Thermal Response Characteristics )dezilamron( ecnatsiseR lamrehT 1.0 0.8 0.6 0.4 0.2 0.001 100.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 1.0 0.4 0.2 0.8 0.6 0 0.1 0.2 G SF )stnemeis( ID (amperes) VDS (volts) Power Dissipation vs. Temperature 0 15010050 1.0 0.8 0.6 0.4 0.2 1257525 TA (°C) PD )sttaw( SOT-23 (pulsed ) VGS = 10V VGS =10V SOT-23 (DC ) SOT-23 0.3 0.50.4 VDS VDS = 15V TA = 25°C SOT-2 3 TA = 25°C PD = 0.36 W TA = -55°C 25°C 125° C
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves (cont.) Gate Drive Dynamic Characteristics V SG )stlov( Tj(°C) V )ht(SG )dezilamron( R )NO(SD )dezilamron( VTH and RDS Variation with Temperature On-Resistance vs. Drain Current R )NO(SD )smho( BVDSS Variation with Temperature VB SSD )dezilamron( Tj(°C) Transfer Characteristics ID )serepma( Capacitance vs. Drain-to-Source Voltage )sdarafocip( C ID (amperes) 0 10 20 30 4 0 0 2 4 6 8 10 -50 0 50 100 150 1.1 1.0 1.2 1.1 1.0 0.9 0.8 -50 0 50 100 150 28pF VDS = 10V VDS = 40V VGS = 4.5V VGS = 10V f = 1MHz 0.9 80 pF 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 1mA RDS(ON) @ 4.5V, 120mA 1.0 0.8 0.6 0.4 0.2 TA = -55°C VDS = 15V 125°C QG (nanocoulombs)VDS (volts) VGS (volts) VDS = 15V CISS COSS CRSS 25°C

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications ©2009 All rights reserved. Unauthorized use or reproduction is prohibited .

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com TN2130 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2130 A022309 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch Symbol A A1 A2 b D E E1 e e1 L L1 θ Dimension (mm) 0.95 BSC 1.90 BSC 0.20† 0.54 REF JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208. View B View A - ASide View Top View View B