TN2124 SUTEX | Alldatasheet

Document overview

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Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

Applications

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Product marking for SOT-23: N1C ❋ where ❋ = 2-week alpha date code

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. TO-236AB (SOT-23) top view Gate Source Drain TO-243AA (SOT-89) G D S D

90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR *I DRM @ T A = 25°C °C/W °C/W TO-236AB 134mA 250mA 0.36W 200 350 134mA 250mA TO-243AA 230mA 1.1A 1.6W † 15 78 † 230mA 1.1A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board. 25mmx25mmx1.57mm. Significant PD increase possible on ceramic substrate. Thermal Characteristics Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source Breakdown Voltage 240 V I D = 1mA, VGS = 0V VGS(th) Gate Threshold Voltage 0.8 2.0 V V GS = VDS , ID = 1mA ∆V GS(th) Change in VGS(th) with Temperature -5.5 mV/ °CI D = 1mA, VGS = VDS IGSS Gate Body Leakage 0.1 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 µAV GS = 0V, VDS = Max Rating 100 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 140 mA V GS = 4.5V, VDS = 25V R DS(ON) 30 Ω VGS = 3V, ID = 25mA 15 Ω VGS = 4.5V, ID = 120mA ∆R DS(ON) Change in RDS(ON) with Temperature 0.7 1.0 %/ °CI D = 120mA, VGS = 4.5V G FS Forward Transconductance 100 170 m V DS = 25V, ID = 120mA C ISS Input Capacitance 38 50 C OSS Common Source Output Capacitance 9 15 pF V GS = 0V, VDS = 25V, f = 1MHz C RSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 4 7 tr Rise Time 2 5 td(OFF) Turn-OFF Delay Time 7 10 tf Fall Time 9 12 VSD Diode Forward Voltage Drop 1.8 V I SD = 120mA, VGS = 0V trr Reverse Recovery Time 400 ns I SD = 120mA, VGS = 0V Notes: 2.All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 25V ns I D = 140mA R GEN = 25Ω Static Drain-to-Source ON-State Resistance Ω

Typical Performance Curves Output Characteristics 2.0 1.6 1.2 0.8 0.4 01 0 2 0 3 0 5 0 40 VDS (volts) I (amperes)D Saturation Characteristics 1.0 0.8 0.6 0.4 0.2 0246 1 0 8 VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 0 1000 10010 0.1 1.0 0.01 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 G FS (siemens) ID (amperes) Power Dissipation vs. Temperature TA C)°( DP (watts) SOT-23 TA = 25°C P D = 0.36W 25°C -55°C SOT-23 (pulsed) SOT-23 (DC) TA= 25°C TA= 125°C VDS = 25V VGS = 10V VGS = 10V 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 SOT-23 SOT-89 SOT-89 (pulsed) SOT-89 SOT-89 TA = 25°C PD = 1.6W

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 08/30/99 Typical Performance Curves Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) VTH and RDS Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R BV DSS Variation with Temperature DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) I 01 02 0 3 0 4 0 02468 1 0 1.0 0.8 0.6 0.4 0.2 -50 0 50 100 150 1.1 1.0 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 32 pF VDS = 40V VDS = 10V 100pF VGS = 4.5V VGS = 3V 125°C f = 1MHz C ISS C OSSC RSS 0.9 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 1mA 25°C TA = -55°C VDS = 25V R DS(ON) @ 4.5V, 120mA