TN2106N3-G SUTEX | Alldatasheet

Document overview

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Technical content

Features

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain ► Complementary N- and P-channel devices

Applications

Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo-voltaic drives Analog switches General purpose line drivers Telecom switches

  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID = 1.0mA ΔVGS(th) Change in VGS(th) with temperature - -3.8 -5.5 mV/OC VGS = VDS, ID = 1.0mA IGSS Gate body leakage - 0.1 100 nA VGS = ± 20V, VDS = 0V IDSS Zero gate voltage drain current - - 1.0 µA VGS = 0V, VDS = Max Rating - - 100 VDS = 0.8Max Rating, VGS = 0V, TA = 125OC ID(ON) On-state drain current 0.6 - - A VGS = 10V, VDS = 25V RDS(ON) Static drain-to-source on-state resistance - - 5.0 Ω VGS = 4.5V, ID = 200mA - - 2.5 VGS = 10V, ID = 500mA ΔRDS(ON) Change in RDS(ON) with temperature - 0.70 1.0 %/OC VGS = 10V, ID = 500mA GFS Forward transductance 150 400 - mmho VDS = 25V, ID = 500mA CISS Input capacitance - 35 50 pF VGS = 0V, VDS = 25V, f = 1.0MHz COSS Common source output capacitance - 17 25 CRSS Reverse transfer capacitance - 7.0 8.0 td(ON) Turn-on delay time - 3.0 5.0 ns VDD = 25V, ID = 0.5A, RGEN = 25Ω tr Rise time - 5.0 8.0 td(OFF) Turn-off delay time - 6.0 9.0 tf Fall time - 5.0 8.0 VSD Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 500mA trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 500mA Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. Notes: † ID (continuous) is limited by max rated Tj . Thermal Characteristics Package ID (continuous)† (mA) ID (pulsed) (A) Power Dissipation @TA = 25OC (W) θjc (OC/W) θja (OC/W) IDR (mA) IDRM (A) TO-236AB (SOT-23) 280 0.8 0.36 200 350 280 0.8 TO-92 300 1.0 0.74 125 170 300 1.0 Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD RGEN
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves Output Characteristics 2.5 2.0 1.5 1.0 0.5 VDS (volts) I )serepma(D Saturation Characteristics VDS (volts) I )serepma(D Maximum Rated Safe Operating Area 0.1 100101 1.0 0.1 0.01 0.001 VDS (volts) I )serepma(D Thermal Response Characteristics )dezilamron( ecnatsiseR lamrehT 1.0 0.8 0.6 0.4 0.2 0.001 100.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 0.5 0.4 0.3 0.2 0.1 0 0.40.2 G SF )snemeis( ID (amperes) Power Dissipation vs. Temperature 0 15010050 1.0 0.8 0.6 0.4 0.2 1257525 TA C)O( DP )sttaw( TO-236A B TA = 25 OC PD = 0.36 W TO-92 SOT-23 TA = -55OC VDS = 25V 0 10 20 30 5040 0 2 4 6 108 25OC 125OC 0.6 1.00.8 10V 2.5 2.0 1.5 1.0 0.5 10V SOT-23 (DC) SOT-23 (pulsed) VGS =VGS = TA = 25OC TO-92 TC = 25 OC PD = 1W
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves (cont.) Gate Drive Dynamic Characteristics QG (nanocoulombs) V SG )stlov( Tj (OC) V )ht(SG )dezilamron( R )NO(SD )dezilamron( VGS(th) and RDS(ON) Variation with Temperature On-Resistance vs. Drain Current R )NO(SD )smho( VB SSD )dezilamron( Tj (OC) Transfer Characteristics VGS (volts) ID )serepma( Capacitance vs. Drain-to-Source Voltage 100 )sdarafocip( C VDS (volts) ID (amperes) BVDSS Variation with Temperature 0 10 20 30 4 0 0 2 4 6 8 1 0 1.0 0.8 0.6 0.4 0.2 -50 0 50 100 150 1.1 1.0 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 1 50 38 pF VDS = 20V VDS = 10V VGS = 4.5V VGS = 10V TA = -55OC VDS = 25V 125OC f = 1MHz CISS COSS CRSS 0.9 92 pF 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 1mA 25OC RDS(ON) @ 10V, 0.5A
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 3-Lead TO-236AB (SOT-23) Package Outline (K1/T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch Symbol A A1 A2 b D E E1 e e1 L L1 θ Dimension (mm) 0.95 BSC 1.90 BSC 0.20† 0.54 REF JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208. View B View A - ASide View Top View View B

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications ©2008 All rights reserved. Unauthorized use or reproduction is prohibited .

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com TN2106 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2106 A091208 3-Lead TO-92 Package Outline (N3) Symbol A b c D E E1 e e1 L Dimensions (inches) JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. Seating Plane Front View Side View Bottom View E D L e c 1 2 3 b A