TN2106 SUTEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

Applications

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Product marking for SOT-23: N1L k where k = 2-week alpha date code TO-236AB (SOT-23) top view Gate Source Drain S G D TO-92 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs

Ordering Information

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR *I DRM @ T A = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source Breakdown Voltage 60 V I D = 1mA, VGS = 0V VGS(th) Gate Threshold Voltage 0.6 2.0 V V GS = VDS , ID = 1mA ΔV GS(th) Change in VGS(th) with Temperature -3.8 -5.5 mV/ °CI D = 1mA, VGS = VDS IGSS Gate Body Leakage 0.1 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 µAV GS = 0V, VDS = Max Rating 100 µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.6 A V GS = 10V, VDS = 25V R DS(ON) 5.0 Ω VGS = 4.5V, ID = 200mA 2.5 Ω VGS = 10V, ID = 500mA ΔR DS(ON) Change in RDS(ON) with Temperature 0.70 1.0 %/ °CV GS = 10V, ID = 500mA G FS Forward Transconductance 150 400 m V DS = 25V, ID = 500mA C ISS Input Capacitance 35 50 C OSS Common Source Output Capacitance 17 25 pF V GS = 0V, VDS = 25V, f = 1MHz C RSS Reverse Transfer Capacitance 7 8 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 V I SD = 0.5A, VGS = 0V trr Reverse Recovery Time 400 ns I SD = 0.5A, VGS = 0V Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 25V ns I D = 0.5A R GEN = 25Ω Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Static Drain-to-Source ON-State Resistance Ω TN2106

Typical Performance Curves Output Characteristics 2.5 2.0 1.5 1.0 0.5 VDS (volts) I (amperes)D Saturation Characteristics VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 0.1 100 101 1.0 0.1 0.01 0.001 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) T ransconductance vs. Drain Current 0.5 0.4 0.3 0.2 0.1 0 0.4 0.2 G FS (siemens) ID (amperes) Power Dissipation vs. Temperature 0 150 10050 1.0 0.8 0.6 0.4 0.2 1257525 TA C)°( DP (watts) TO-236AB TA = 25°C PD = 0.36W TO-92 SOT-23 TA = -55°C VDS = 25V 01 0 2 0 3 0 5 0 40 0246 1 0 8 25°C 125°C 0.6 1.0 0.8 10V 2.5 2.0 1.5 1.0 0.5 10V SOT-23 (DC) SOT-23 (pulsed) VGS =VGS = TA = 25°C TO-92 TC = 25°C PD = 1W TN2106

Typical Performance Curves Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS (volts) Tj (°C) VGS(th) (normalized) R DS(ON) (normalized) VGS(th) and RDS(ON ) Variation with Temperature On-Resistance vs. Drain Current R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Transfer Characteristics VGS (volts) ID (amperes) Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) ID (amperes) BV DSS Variation with Temperature 0 1 02 03 04 0 02468 1 0 1.0 0.8 0.6 0.4 0.2 -50 0 50 100 150 1.1 1.0 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 38 pF VDS = 20V VDS = 10V V GS = 4.5V VGS = 10V TA = -55°C VDS = 25V 125°C f = 1MHz C ISS C OSS C RSS 0.9 92 pF 2.0 1.6 1.2 0.8 0.4 VGS(th) @ 1mA 25°C R DS(ON) @ 10V, 0.5A TN2106