TN2101

TN2101 SUTEX | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

Applications

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Gate Source Drain TO-236AB (SOT-23) top view Product marking for SOT-23: N1U❋ where ❋ = 2-week alpha date code Low Threshold

Ordering Information

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Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 15 V I D = 1mA, VGS = 0V VGS(th) Gate Threshold Voltage 0.5 1.0 V V GS = VDS, ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/ °CI D = 1mA, VGS = VDS IGSS Gate Body Leakage 100 nA V GS = ±15V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 60 mA V GS = 3.0, VDS = 15V RDS(ON) 50 Ω VGS =1.2V, ID = 2.0mA 7.0 Ω VGS = 3V, ID = 50mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CI D = 50mA, VGS = 3V GFS Forward Transconductance 50 m V DS = 3V, ID = 50mA CISS Input Capacitance 110 COSS Common Source Output Capacitance 60 pF V GS = 0V, VDS = 15V, f = 1MHz CRSS Reverse Transfer Capacitance 35 td(ON) Turn-ON Delay Time 5 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 25 VSD Diode Forward Voltage Drop 1.8 V I SD = 50mA, VGS = 0V trr Reverse Recovery Time 100 ns I SD = 50mA, VGS = 0V Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Ω VDD = 15V ns I D = 50mA RGEN = 25Ω Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Static Drain-to-Source ON-State Resistance TN2101 – OBSOLETE –

Typical Performance Curves Output Characteristics 1.0 0.8 0.6 0.4 0.2 VDS (volts) I (amperes)D Saturation Characteristics VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 0.1 100 101.0 1.0 0.1 0.01 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current 0.25 0.2 0.15 0.1 0.05 0 0.20.1 GFS (siemens) ID (amperes) Power Dissipation vs. Temperature 0 15010050 0.5 0.4 0.3 0.2 0.1 1257525 TA C)°( DP (watts) TO-236AB TA = 25 °C PD = 0.36W SOT-23 -55°CVDS = 3V 0 4 8 12 16 0123 5 4 25°C 125°C 0.3 0.5 0.4 1.0 0.8 0.6 0.4 0.2 SOT-23 (DC) SOT-23 (pulsed) TA = 25°C VGS = 4V VGS=5V TN2101 – OBSOLETE –

Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) VTH and RDS Variation with Temperature C)° On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)° (Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) I BV 05 1 0 15 02468 1 0 1.0 0.8 0.6 0.4 0.2 -50 0 50 100 150 1.1 1.0 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 45 pF VDS = 15V 96 pF VDS = 10V VGS = 3.0V VGS = 1.2V 125°C f = 1MHz CISS COSS CRSS 0.9 1.4 1.2 1.0 0.8 0.6 VGS(th)@ 1mA 25°C -55°C RDS(ON) @ 3V, 50mA Typical Performance Curves TN2101 – OBSOLETE –