TN0702 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Low threshold — 1.0 volt max ❏ On resistance guaranteed at VGS = 2, 3, and 5 volts ❏ High input impedance ❏ Low input capacitance —130pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage

Applications

❏ Logic level interfaces ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C *Distance of 1.6 mm from case for 10 seconds maximum. S G D

Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 0.53A 1.0A 1W 125 170 0.53A 1.0A * ID (continuous) is limited by max rated Tj. Thermal Characteristics BVDSS Drain-to-Source Breakdown Voltage 20 V V GS = 0V, ID = 1mA VGS(th) Gate Threshold Voltage 0.5 0.8 1.0 V V GS = VDS, ID = 1.0mA ∆VGS(th) Change in VGS(th) with Temperature -4.0 mV/ °CV GS = VDS, ID = 1.0mA IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 100 nA V DS = 20V, VGS = 0V 100 µA ID(ON) ON-State Drain Current 0.5 1.0 A V GS = VDS = 5V 4.0 5.0 V GS = 2V, ID = 50mA RDS(ON) 1.9 2.5 Ω VGS = 3V, ID = 200mA 1.0 1.3 V GS = 5V, ID =500mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = 5V, ID = 500mA GFS Forward Transconductance 100 500 m V DS = 5V, ID = 500mA CISS Input Capacitance 130 200 COSS Common Source Output Capacitance 70 125 pF V GS = 0V, VDS = 20V, f =1MHz CRSS Reverse Transfer Capacitance 30 60 td(ON) Turn-ON Delay Time 20 tr Rise Time 20 ns td(OFF) Turn-OFF Delay Time 30 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.0 V V GS = 0V, ISD = 0.5A Symbol Parameter Min Typ Max Unit Conditions Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 20V, ID = 0.5A, RGEN = 25Ω VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C Notes: 2. All A.C. parameters sample tested. Ω Static Drain-to-Source ON-State Resistance

Typical Performance Curves /K50/K6F/K77/K65/K72 /K44/K69/K73/K73/K69/K70/K61/K74/K69/K6F/K6E /K76/K73/K2E /K43/K61/K73/K65 /K54/K65/K6D/K70/K65/K72/K61/K74/K75/K72/K65 /K30 /K31/K35/K30/K31/K30/K30/K35/K30 /K32/K2E/K30 /K54/K4F/K2D/K39/K32 /K31/K32/K35/K37/K35/K32/K35 /K4F/K75/K74/K70/K75/K74 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K35 /K34 /K33 /K32 /K31 /K30 /K30 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K28/K61/K6D/K70/K65/K72/K65/K73/K29/K44 /K53/K61/K74/K75/K72/K61/K74/K69/K6F/K6E /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K30/K32 /K34/K36 /K31 /K30 /K38 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K28/K61/K6D/K70/K65/K72/K65/K73/K29/K44 /K4D/K61/K78/K69/K6D/K75/K6D /K52/K61/K74/K65/K64 /K53/K61/K66/K65 /K4F/K70/K65/K72/K61/K74/K69/K6E/K67 /K41/K72/K65/K61 /K30/K2E/K31 /K31/K30/K30 /K31/K30/K31 /K30/K2E/K31 /K31/K2E/K30 /K31/K30 /K54/K4F/K2D/K39/K32 /K28/K44/K43/K29 /K56 /K44/K53 /K28/K76/K6F/K6C/K74/K73/K29 /K49 /K28/K61/K6D/K70/K65/K72/K65/K73/K29/K44 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K70/K6F/K6E/K73/K65 /K43/K68/K61/K72/K61/K63/K74/K65/K72/K69/K73/K74/K69/K63/K73 /K54/K68/K65/K72/K6D/K61/K6C /K52/K65/K73/K69/K73/K74/K61/K6E/K63/K65 /K28/K6E/K6F/K72/K6D/K61/K6C/K69/K7A/K65/K64/K29 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K36 /K30/K2E/K34 /K30/K2E/K32 /K30/K2E/K30/K30/K31 /K31/K30 /K30/K2E/K30/K31 /K30/K2E/K31 /K31 /K74 /K70 /K28/K73/K65/K63/K6F/K6E/K64/K73/K29 /K54/K72/K61/K6E/K73/K63/K6F/K6E/K64/K75/K63/K74/K61/K6E/K63/K65 /K76/K73/K2E /K44/K72/K61/K69/K6E /K43/K75/K72/K72/K65/K6E/K74 /K32/K2E/K30 /K30/K35 /K31/K32/K33/K34 /K47 /K46/K53 /K28/K73/K69/K65/K6D/K65/K6E/K73/K29 /K49 /K44 /K28/K61/K6D/K70/K65/K72/K65/K73/K29 /K54 /K41 /K3D /K31/K32/K35 °/K43 /K44/K50 /K28/K77/K61/K74/K74/K73/K29 /K31/K2E/K30 /K54/K4F/K2D/K39/K32 /K54 /K43 /K3D/K32 /K35 °/K43 /K50 /K44 /K3D/K31 /K57 /K56 /K47/K53 /K3D/K38 /K56 /K30 /K30/K2E/K30/K31 /K30 /K56 /K47/K53 /K3D/K36 /K56 /K56 /K47/K53 /K3D/K34/K56 /K56 /K47/K53 /K3D/K33 /K56 /K56 /K47/K53 /K3D/K32 /K56 /K54 /K41 /K3D/K32 /K35 °/K43 /K54 /K43 /K3D/K32 /K35 °/K43 /K54 /K41 /K3D /K2D/K35/K35 °/K43 /K54/K4F/K2D/K39/K32 /K28/K70/K75/K6C/K73/K65/K64/K29 /K31/K2E/K30 /K30 /K56 /K47/K53 /K3D/K38 /K56 /K56 /K47/K53 /K3D/K36 /K56 /K56 /K47/K53 /K3D/K34/K56 /K56 /K47/K53 /K3D/K33 /K56 /K56 /K47/K53 /K3D/K32 /K56 /K35 /K34 /K33 /K32 /K31 /K30 /K56 /K47/K53 /K3D/K35 /K56 /K56 /K47/K53 /K3D/K35 /K56 /K35/K31 /K30 /K31 /K35/K32 /K30 /K56 /K44/K53 /K3D/K35 /K56

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 02/06//02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 1.6 1.4 1.2 1.0 0.8 0.6 On-Resistance vs. Drain Current 0 2.5 1.2 1.0 0.8 -50 0 50 100 150 Transfer Characteristics 0246 1 0 8 VDS = 5V Capacitance vs. Drain-to-Source Voltage 200 150 100 05 1 0 15 20 C (picofarads) 146 pF 1.0 BV V(th) @ 1mA RDS(ON) @ 5V, 500mA 0 0 CISS VGS = 5V 0.5 1.5 2.0 200pF COSS CRSS TA = -55°C TA = 25°C TA = 125°C f = 1MHz RDS(ON) (ohms) BVDSS (normalized) Tj (°C) Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS = 3V VGS = 2V RDS(ON) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) VGS(th) (normalized) QG (nanocoulombs) VGS (volts) VDS (volts) VDS = 10V VDS = 20V TN0702