TN0620 SUTEX | Alldatasheet

Document overview

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Technical content

Features

nn Low threshold — 1.6V max. nn High input impedance nn Low input capacitance — 110pF typical nn Fast switching speeds nn Low on resistance nn Free from secondary breakdown nn Low input and output leakage nn Complementary N- and P-channel devices

Applications

nn Logic level interfaces – ideal for TTL and CMOS nn Solid state relays nn Battery operated systems nn Photo voltaic drives nn Analog switches nn General purpose line drivers nn Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage – 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. Package Options Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

G D S TO-220 TAB: DRAIN

90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT 50W INPUT OUTPUT 10V VDD Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, ID = 2.0mA VGS(th) Gate Threshold Voltage 0.6 1.6 V V GS = VDS , ID = 1.0mA DVGS(th) Change in VGS(th) with Temperature -5.0 mV/ °CV GS = VDS , ID = 1.0mA IGSS Gate Body Leakage 100 nA V GS = –20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 mAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.5 V GS = 5V, VDS = 25V

1.0 V GS = 10V, VDS = 25V

R DS(ON) 6.0 8.0 V GS = 5V, ID = 0.25A 4.0 6.0 V GS = 10V, ID = 0.5A DR DS(ON) Change in RDS(ON) with Temperature 1.4 %/ °CV GS = 10V, ID = 0.5A G FS Forward Transconductance 300 400 m V DS = 25V, ID = 0.5A C ISS Input Capacitance 110 150 C OSS Common Source Output Capacitance 40 85 pF C RSS Reverse Transfer Capacitance 10 35 td(ON) Turn-ON Delay Time 10 tr Rise Time 8 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.8 V V GS = 0V, ISD = 1.0A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1.0A Notes: 2. All A.C. parameters sample tested. TN0620 Thermal Characteristics Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance W A VGS = 0V, VDS = 25V f = 1 MHz Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation qjc qja IDR *I DRM @ T C = 25°C °C/W °C/W TO-92 0.4A 2.0A 1W 125 170 0.4A 2.0A ID (continuous) is limited by max rated Tj. ns VDD = 25V ID = 1.0A R GEN = 25W W

4.0 3.2 2.4 1.6 0.8 01 0 2 0 3 0 5 0 40 VDS (volts) I (amperes)D Saturation Characteristics 4.0 3.2 2.4 1.6 0.8 0246 1 0 8 10V VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 1 1000 10010 0.1 1.0 0.01 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 150 10050 125 7525 TC C)°( DP (watts) 10V TO-220 TO-39 TO-92 VDS = 25V TA = -55°C TA = 25°C TC = 25°C TO-220 PD = 45W TC = 25°C TA = 150°C VGS = TO-220 (DC) TO-92 (DC) VGS = TO-92 PD = 1W TC = 25°C Typical Performance Curves TN0620

Typical Performance Curves Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) V DS(th)and R Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 200 150 100 C (picofarads) VDS (volts) I BV 0 1 02 03 04 0 02468 1 0 4.0 3.2 2.4 1.6 0.8 -50 0 50 100 150 1.1 1.0 0.9 1.4 1.2 1.0 0.8 0.6 2.0 1.6 1.2 0.8 0.4 -50 0 50 100 150 100 pF VDS = 40V VDS = 10V 178 pF (th)V @ 1mA V GS = 5V VGS = 10V T = -55°CA VDS = 25V C ISS C OSS C RSS R @ 10V, 0.5ADS f = 1MHz T = 25°CA T = 150°CA