TN0602 SUTEX | Alldatasheet

Document overview

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Technical content

Features

Low threshold — 1.6V max. High input impedance Low input capacitance — 140pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices

Applications

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches TO-92 S G D

Package I D (continuous)* I D (pulsed) Power Dissipation qjc qja IDR *I DRM @ T C = 25°C °C/W °C/W TO-92 1.0A 4.6A 1W 125 170 1.0A 4.6A SOW-20 Refer to Arrays & Special Functions Section. ID (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BV DSS TN0604 40 TN0602 20 V GS(th) Gate Threshold Voltage 0.6 1.6 V V GS = VDS , ID = 1.0mA DVGS(th) Change in VGS(th) with Temperature -3.8 -4.5 mV/ °CV GS = VDS , ID = 2.5mA IGSS Gate Body Leakage 100 nA V GS = –20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 mAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 1.5 2.1 V GS = 5V, VDS = 20V 4.0 7.0 V GS = 10V, VDS = 20V R DS(ON) TO-92/SOW-20 1.0 1.6 W VGS = 5V, ID = 0.75A TO-92 0.6 0.75 W VGS = 10V, ID = 1.5A SOW - 20 1.0 DR DS(ON) Change in RDS(ON) with Temperature 0.5 0.75 %/ °CV GS = 10V, ID = 1.5A G FS Forward Transconductance 0.5 0.8 V DS = 20V, ID = 1.5A C ISS Input Capacitance 140 190 C OSS Common Source Output Capacitance 75 110 pF C RSS Reverse Transfer Capacitance 25 50 td(ON) Turn-ON Delay Time 10 tr Rise Time 6.0 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.2 1.8 V V GS = 0V, ISD = 1.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1A Notes: 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300ms pulse, 2% duty cycle.) 2: All A.C. parameters sample tested. VV GS = 0V, ID = 2.0mA A Electrical Characteristics (@ 25°C unless otherwise specified) 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Switching Waveforms and Test Circuit VGS = 0V, VDS = 20V f = 1 MHz VDD = 20V ns I D = 0.5A R GEN = 25W W TN0602/TN0604 Static Drain-to-Source ON-State Resistance Drain-to-Source Breakdown Voltage

Typical Performance Curves Power Dissipation vs. Case Temperature 0 150 10050 TO-92 1257525 TC C)°( 10V Output Characteristics 01 0 2 0 3 0 5 0 40 VDS (volts) I (amperes)D Saturation Characteristics 0246 1 0 8 10V VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 0.1 100 101 0.1 1.0 TO-92 (DC) TC = 25°C VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 2.0 07 1 456 G FS (siemens) ID (amperes) TA = -55°C TA = 25°C TA = 125°C DP (watts) VDSVDS = 25V 1.0 TO-92 (pulsed) VGS = 0 0 0 0 0.01 0 VGS = TO-92 TC = 25°C P D = 1W TN0602/TN0604

Typical Performance Curves TN0602/TN0604 Gate Drive Dynamic Characteristics 170 pF 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 1.4 0.8 1.2 0.6 1.0 On-Resistance vs. Drain Current 2.0 0 10.0 1.1 1.0 0.9 -50 0 50 100 150 Transfer Characteristics 0246 1 0 8 VDS = 25V T = -55 A T = 125 Capacitance vs. Drain-to-Source Voltage 200 150 100 0 1 02 03 04 0 C (picofarads) f = 1MHz C OSS C RSS 170 pF 5.0 1.0 T = 25 A A V(th) @ 1mA R @ 10V, 1.5ADS 0 0 C ISS R DS(ON) (ohms) BV DSS (normalized) Tj (°C) Tj (°C) ID (amperes) BV DSS Variation with Temperature VGS = 10V VGS = 5V VGS(th) (normalized) R DS(ON) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) Q G (nanocoulombs) VGS (volts) VDS (volts) VDS = 10V VDS = 40V