TN0520 SUTEX | Alldatasheet
Document overview
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Technical content
Features
■■ Low threshold —1.5V max. ■■ High input impedance ■■ Low input capacitance — 45pF typical ■■ Fast switching speeds ■■ Low on resistance ■■ Free from secondary breakdown ■■ Low input and output leakage ■■ Complementary N- and P-channel devices
Applications
■■ Logic level interfaces – ideal for TTL and CMOS ■■ Solid state relays ■■ Battery operated systems ■■ Photo voltaic drives ■■ Analog switches ■■ General purpose line drivers ■■ Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Case: DRAIN – OBSOLETE –
Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BVDSS TN0524 240 TN0520 200 V GS(th) Gate Threshold Voltage 0.6 1.5 V V GS = VDS, ID = 1.0mA ∆VGS(th) Change in VGS(th) with Temperature -3.0 -4.0 mV/ °CV GS = VDS, ID = 1.0mA IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 V GS = 0V, VDS = Max Rating 500 µAV DS = 0V, VGS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 100 360 V GS = 3V, VDS = 25V 300 850 V GS = 5V, VDS = 25V RDS(ON) 9.0 15 V GS = 3V, ID = 50mA 7.0 10 V GS = 5V, ID = 100mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.9 1.5 %/ °CV GS = 5V, ID = 100mA GFS Forward Transconductance 0.15 0.35 V DS = 25V, ID = 0.2A CISS Input Capacitance 45 60 COSS Common Source Output Capacitance 15 35 pF CRSS Reverse Transfer Capacitance 3.0 8.0 td(ON) Turn-ON Delay Time 3.0 5.0 tr Rise Time 3.0 5.0 td(OFF) Turn-OFF Delay Time 5.0 10 tf Fall Time 3.0 9.0 VSD Diode Forward Voltage Drop 1.1 2.5 V V GS = 0V, ISD = 100mA trr Reverse Recovery Time 400 ns V GS = 0V, ISD = 100mA Notes: 2. All A.C. parameters sample tested. mA VV GS= 0V, ID =1mADrain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = 25V f = 1 MHz VDD = 25V ID = 0.3A RGEN = 25Ω ns Ω Ω – OBSOLETE –
2.0 1.6 1.2 0.8 0.4 VDS (volts) I (amperes)D Saturation Characteristics 0246 1 0 8 VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 0.01 0.1 1.0 0.001 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 tp (seconds) Transconductance vs. Drain Current GFS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 15010050 1257525 TC C)° DP (watts) TO-92 TO-39 1.0 0.8 0.6 0.4 0.2 02 0 4 0 6 0 10080 0.5 0.4 0.3 0.2 0.1 0 0.4 1.0 TA = -55°C TO-39 (DC) TO-92 (DC) 100010010 0.2 0.6 0.8 TO-92 (pulsed) VGS = 10V VGS = 10V TA = 25°C TA = 150°C VDS = 25V TO-39 PD = 3.5W Tvv = 25°C TC = 25°C TO-92 PD = 1W TC = 25 °C Typical Performance Curves TN0520/TN0524 – OBSOLETE –
Typical Performance Curves Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) V DS(th) and R Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) I BV 01 0 2 03 04 0 02468 1 0 -50 0 50 100 150 1.20 1.14 1.08 1.02 0.96 0.90 2.4 2.0 1.6 1.2 0.8 0.40 -50 0 50 100 150 1.5 1.2 0.9 0.6 0.3 VDS = 25V T = -55A C° T = 25A C° TA =125 C° f = 1MHz CISS COSS CRSS 0.4 0.8 1.2 1.6 20 125 pF VDS = 40V VDS = 10V 50pF VGS = 3V VGS = 5V (th)V @ 1.0mA R @ 5V, 0.1ADS(ON) 1.6 1.4 1.2 1.0 0.8 – OBSOLETE –