TN0106 SUTEX | Alldatasheet

Document overview

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Technical content

Features

nn Low threshold — 2.0V max. nn High input impedance nn Low input capacitance — 50pF typical nn Fast switching speeds nn Low on resistance nn Free from secondary breakdown nn Low input and output leakage nn Complementary N- and P-channel devices

Applications

nn Logic level interfaces – ideal for TTL and CMOS nn Solid state relays nn Battery operated systems nn Photo voltaic drives nn Analog switches nn General purpose line drivers nn Telecom switches Note: See Package Outline section for dimensions.

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage – 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. TO-92 S G D

Package I D (continuous)* I D (pulsed) Power Dissipation qjc qja IDR *I DRM @ T C = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. TN0106/TN0110 Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Symbol Parameter Min Typ Max Unit Conditions BV DSS TN0110 100 TN0106 60 V GS(th) Gate Threshold Voltage 0.6 2.0 V V GS = VDS , ID = 0.5mA DV GS(th) Change in VGS(th) with Temperature -3.2 -5.0 mV/ °CV GS = VDS , ID = 1.0mA IGSS Gate Body Leakage 100 nA V GS = –20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 V GS = 0V, VDS = Max Rating 500 mAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.75 1.4 V GS = 5V, VDS = 25V 2.0 3.4 V GS = 10V, VDS = 25V R DS(ON) 2.0 4.5 V GS = 4.5V, ID = 250mA 1.6 3.0 V GS = 10V, ID = 500mA DR DS(ON) Change in RDS(ON) with Temperature 0.6 1.1 %/ °CI D = 0.5A, VGS = 10V G FS Forward Transconductance 225 400 m V DS = 25V, ID = 500mA C ISS Input Capacitance 50 60 C OSS Common Source Output Capacitance 25 35 pF C RSS Reverse Transfer Capacitance 4.0 8.0 td(ON) Turn-ON Delay Time 2.0 5.0 tr Rise Time 3.0 5.0 td(OFF) Turn-OFF Delay Time 6.0 7.0 tf Fall Time 3.0 6.0 VSD Diode Forward Voltage Drop 1.0 1.5 V I SD = 0.5A, VGS = 0V trr Reverse Recovery Time 400 ns I SD = 0.5A, VGS = 0V Notes: 2. All A.C. parameters sample tested. A VI D = 1mA, VGS = 0VDrain-to-Source Breakdown Voltage VGS = 0V, VDS = 25V f = 1 MHz Static Drain-to-Source ON-State Resistance VDD = 25V ns I D = 1.0A R GEN = 25W Electrical Characteristics (@ 25°C unless otherwise specified) W W

Typical Performance Curves TN0106/TN0110 Output Characteristics 01 0 2 0 3 0 5 0 40 VDS (volts) I (amperes)D Saturation Characteristics 0246 1 0 8 VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 1 1000 10010 0.1 1.0 0.01 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.5 0.4 0.3 0.2 0.1 0 3.0.6 1.2 1.8 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 150 10050 1257525 TC C)°( DP (watts) VDS = 25V TO-92 TO-92 TC = 25°C PD = 1W TO-92 (DC) TO-92 (pulsed) 2.4 0 0 TA = -55°C VGS = 10V VGS = 10V TA = 25°C TA = 150°C TC = 25°C

Typical Performance Curves Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) V DS(th)and R Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) I BV 0 1 02 03 04 0 02468 1 0 3.0 2.4 1.8 1.2 0.6 -50 0 50 100 150 1.3 1.2 0.8 5.0 2.0 05 . 0 3.0 1.4 1.2 1.0 0.8 0.6 0.4 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 f = 1MHz 4.0 3.0 1.0 1.0 2.0 4.0 40V 0.9 1.0 1.1 50pF0 0 VGS = 5V V GS = 10V VDS = 25V TA = -55°C 25°C 150°C V(th)@ 0.5mA R DS(ON) @ 10V, 0.5A C ISS C OSS C RSS VDS = 10V 55pF