TN0104N3

TN0104 SUTEX | Alldatasheet

Document overview

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Technical content

Features

Low threshold —1.6V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices

Applications

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches TO-243AA (SOT-89) G D S D TO -92 S G D BV DSS /R DS(ON) VGS(th) ID(ON) BV DGS (max) (max) (min) TO-92 TO-243AA* Die † 40V 1.8 Ω 1.6V 2.0A TN0104N3 — TN0104ND 40V 2.0 Ω 1.6V 2.0A — TN0104N8 — * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available Order Number / Package

Ordering Information

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds. Product marking for TO-243AA: Where *=2-week alpha date code TN1L*

Symbol Parameter Min Typ Max Unit Conditions BV DSS VGS(th) Gate Threshold Voltage 0.6 1.6 V V GS = VDS , ID = 500mA DVGS(th) Change in VGS(th) with Temperature -3.8 -5.0 mV/ °CV GS = VDS , ID = 1.0mA IGSS Gate Body Leakage 0.1 100 nA V GS = –20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1 mAV GS =0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.35 V GS = 3V, VDS = 20V 0.5 1.1 V GS = 5V, VDS = 20V 2.0 2.6 V GS = 10V, VDS = 20V R DS(ON) 5.0 V GS = 3V, ID = 50mA 2.3 2.5 V GS = 5V, ID = 250mA TO-92 1.5 1.8 V GS = 10V, ID = 1A TO-243AA 2.0 V GS = 10V, ID = 1A DR DS(ON) Change in RDS(ON) with Temperature 0.7 1.0 %/ °CV GS =10V, ID = 1A, G FS Forward Transconductance 0.34 0.45 V DS = 20V, ID = 0.5A C ISS Input Capacitance 70 C OSS Common Source Output Capacitance 50 pF C RSS Reverse Transfer Capacitance 15 td(ON) Turn-ON Delay Time 3.0 5.0 tr Rise Time 7.0 8.0 td(OFF) Turn-OFF Delay Time 6.0 9.0 tf Fall Time 5.0 8.0 VSD Diode Forward TO-92 1.2 1.8 V GS = 0V, ISD = 1.0A TO-243AA 2.0 V GS = 0V, ISD = 0.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = 1A Notes: 2. All A.C. parameters sample tested. Thermal Characteristics VV GS = 0V, ID = 1.0mADrain-to-Source Breakdown Voltage 100 mA A Static Drain-to-Source ON-State Resistance All Packages W V Electrical Characteristics (@ 25°C unless otherwise specified) Voltage Drop ns VDD = 20V, ID = 1A R GEN = 25W Package I D (continuous)* I D (pulsed) Power Dissipation qjc qja IDR *I DRM @ T C = 25°C °C/W °C/W TO-243AA 1.40A 2.90A 1.6W † 15 78 † 1.40A 2.90A 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD R gen Switching Waveforms and Test Circuit * ID (continuous) is limited by max rated Tj. † TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate. W VGS = 0V, VDS = 20V f = 1 MHz TN0104

Typical Performance Curves Output Characteristics 3.75 3.0 2.25 1.5 0.75 01 0 2 0 3 0 5 0 40 VDS (volts) I (amperes)D Saturation Characteristics 3.75 3.0 2.25 1.5 0.75 0246 1 0 8 VDS (volts) I (amperes)D Maximum Rated Safe Operating Area 0.1 100 101 0.1 1.0 0.01 VDS (volts) I (amperes)D Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 0.75 0.60 0.45 0.30 0.15 G FS (siemens) ID (amperes) Power Dissipation vs. Case Temperature 0 150 10050 1257525 TC C)°( DP (watts) TO-92 T = -55A C° T = 25A C° TA = 125 C° TO-243AA (DC) (TA = 25°C) VDS = -25VVDS = 25V VGS = 10V VGS = 10V TO-243AA (TA = 25°C) TO-39 (DC) TO-92 (DC) TO-243AA TA = 25°C PD = 1.6W TO-92 P D = 1W TC = 25°C TN0104

Gate Drive Dynamic Characteristics Q (nanocoulombs)G VGS (volts) Tj GS(th)V (normalized) DS(ON)R (normalized) V DS(th)and R Variation with Temperature C)°( On-Resistance vs. Drain Current (amperes)D (ohms)DS(ON)R Variation with TemperatureDSS DSSBV (normalized) C)°(Tj Transfer Characteristics VGS (volts) I (amperes)D Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) VDS (volts) I BV 0 1 02 03 04 0 02468 1 0 3.0 2.4 1.8 1.2 0.6 -50 0 50 100 150 1.3 1.2 1.1 1.0 0.9 0.8 02 1 1.4 1.2 1.0 0.8 0.6 0.4 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 55pF VDS = 10V V GS = 5V VGS = 10V TA = -55 C° f = 1MHz C ISS C OSS C RSS 40V 25 C° 125 C° VDS = 25V 50pF V(th) @ 0.5mA R DS(ON) @ 5V, 0.25A Typical Performance Curves TN0104