TC7320

TC7320 SUTEX | Alldatasheet

Document overview

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Technical content

Features

‰ Six N- and P-channel MOSFET pairs ‰ Integrated gate-source resistor ‰ Integrated gate-source zener diode ‰ Low threshold ‰ Low on-resistance ‰ Low input capacitance ‰ Fast switching speeds ‰ Free from secondary breakdowns ‰ Low input and output leakage Application ‰ High voltage pulsers ‰ Amplifiers ‰ Buffers ‰ Piezoelectric transducer drivers ‰ General purpose line drivers ‰ Logic level interfaces Absolute Maximum Ratings* Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C *Distance of 1.6mm from case for 10 seconds. General Description The Supertex TC7320FG consists of a six pairs of high voltage low threshold N-channel and P-channel MOSFETs in a 32-lead LQFP package. All the MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. These low threshold enhancement-mode (normally-off) transistors utilize an advanced lateral DMOS structure and Supertex's well- proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex's lateral DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

RDS(ON) (max) 32-Lead LQFP N-Channel P-Channel N-Channel P-Channel TC7320FG 200V -200V 20Ω 20Ω TC7320FG-G* 200V -200V 20Ω 20Ω *“Green” certified package TC7320 A080405

N-Channel Electrical Characteristics (at TA=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS=0V, ID=1mA VGS(th) Gate Threshold Voltage 0.4 V VGS=VDS, ID=1mA ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/°C VGS=VDS, ID=1mA RGS Gate-Source Shunt Resistor 0.9 8.0 KΩ IGS=100µA ∆RGS Change in RGS with Temperature TBD %/°C IGS=100µA VzGS Gate-Source Zener Voltage V IGS=2.0mA ∆VzGS Change in VzGS with Temperature TBD mV/°C IGS=2.0mA µA VGS=0V, VDS=Max Rating IDSS Zero Gate Voltage Drain Current 1.0 mA VGS=0V, VDS=0.8 Max Rating, TA=125°C ID(ON) On-State Drain Current 1.0 A VGS=10V, VDS=25V RDS(ON) Static Drain-to-Source ON-State Resistance Ω VGS=10V, ID=150mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS=10V, ID=150mA GFS Forward Transconductance 150 mmho VDS=25V, ID=200mA CISS Input Capacitance 150 COSS Common Source Output Capacitance CRSS Reverse Transfer Capacitance pF VGS=0V, VDS=25V f=1MHz td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time ns VDD=25V, ID=500mA RGEN=25 Ω VSD Diode Forward Voltage Drop 1.8 V VGS=0V, ISD=0.5A trr Reverse Recovery Time 300 ns VGS=0V, ISD=0.5A Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. N-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T OUTPUT 10V VDD td(OFF) Input Output tr tf td(ON) t(ON) t(OFF) 10% 90% 90% 10% 90% 10%

P-Channel Electrical Characteristics (at TA=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage -200 V VGS=0V, ID=-1mA VGS(th) Gate Threshold Voltage -2.3 V VGS=VDS, ID=-1mA ∆VGS(th) Change in VGS(th) with Temperature 4.5 mV/°C VGS=VDS, ID=-1mA RGS Gate-Source Shunt Resistor 0.9 8.0 KΩ IGS=-100µA ∆RGS Change in RGS with Temperature TBD %/°C IGS=-100µA VzGS Gate-Source Zener Voltage V IGS=-2.0mA ∆VGS(th) Change in VzGS with Temperature TBD mV/°C IGS=-2.0mA -10 µA VGS=0V, VDS=Max Rating IDSS Zero Gate Voltage Drain Current -1.0 mA VGS=0V, VDS=0.8 Max Rating, TA=125°C ID(ON) On-State Drain Current -1.0 A VGS=-10V, VDS=-25V RDS(ON) Static Drain-to-Source ON-State Resistance Ω VGS=-10V, ID=-150mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS=-10V, ID=-150mA GFS Forward Transconductance 150 mmho VDS=-25V, ID=-200mA CISS Input Capacitance 200 COSS Common Source Output Capacitance 100 CRSS Reverse Transfer Capacitance pF VGS=0V, VDS=-25V f=1MHz td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time ns VDD=-25V, ID=-500mA RGEN=25 Ω VSD Diode Forward Voltage Drop -1.8 V VGS=0V, ISD=-0.5A trr Reverse Recovery Time 300 ns VGS=0V, ISD=-0.5A Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. P-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T OUTPUT -10V VDD td(OFF) Input Output tr tf td(ON) t(ON) t(OFF) 90% 10% 90% 10% 10% 90%

The VSUB pin needs to be connected to the most positive supply

32 Lead Low Quad Flat Pack (LQFP)*

All dimensions are in millimeters *”Green” certified package 7.00 9.00 9.00 7.00 1.50 0.37 0.80 1.00

32 Lead LQFP

Typical I-V Characteristics N-Channel P-Channel Doc# DSFP-TC7320 A080405 GP1 GN1 GP2 GN2 GP3 GN3 VPP1 VNN1 DP1 DN1 VPP2 VNN2 DP2 DN2 DP3 DN3 VNN3 VPP3 GP4 GN4 DP4 DN4 VNN1 VPP1 GP5 GN5 DP5 DN5 VNN2 VPP2 GP6 GN6 DP6 DN6 VNN3 VPP3 VSUB -1.4 -1.2 -0.8 -0.6 -0.4 -0.2 -10 -20 VDS (Volts) ID (amperes) VGS = 5.0V VGS = 10V -5.0 -15 -25 0.2 0.4 0.6 0.8 1.2 1.4 VDS (Volts) ID (amperes) VGS = 5.0V VGS = 10V 5.0