SR03 SUTEX | Alldatasheet
Document overview
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Technical content
Features
❑ Accepts peak input voltages up to 700V ❑ Operates directly off of rectified 120V AC or 230V AC ❑ Integrated linear regulator ❑ Minimal power dissipation ❑ No high voltage capacitors required ❑ No transformers or inductors required ❑ Up to 1.0W output power
Applications
❑ 3.3V or 5.0V power supplies ❑ SMPS house keeping power supplies ❑ White goods ❑ Appliances ❑ Small off-line low voltage power supplies ❑ Lighting controls SR03x Typical Application Circuit Surge Protection SR036 or SR037 470µF 1.0µF SR036: VOUT = 3.3V Regulated SR037: VOUT = 5.0V Regulated ~18V Unregulated 120VAC or 230VAC VOUT VSOURCE Gate HVIN GN2470 1.0µF B092005 Not RecommendedNot Recommended For New Designs! For New Designs!
Absolute Maximum Ratings* VIN, High Voltage Input +700V VOUT, Low Voltage Output +6.0V Storage Temperature -65°C to +150°C Soldering Temperature +300°C Power Dissipation, MSOP-8 300mW Power Dissipation, SO-8 slug 1.50W 1 * All voltages are referenced to GND. 1. When underside plate soldered to 2cm 2 of exposed copper. *Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Ordering Information
V3.3* GM630RSG S630RS V0.5* GM730RSG S730RS .leerepatreirraceceip0052nodeilppustcudorP* Pin Configuration SO-8 Slug Make no electrical connections to Backside Plate (top view) HV IN G ate N/C Source N/C V OUT GND N/C MSOP-8 (top view) HV IN G ate N/C Source N/C V OUT GND N/C
Electrical Characteristics
(Over operating supply voltages unless otherwise specified, TA=0°C to +125°C) lobmySr etemaraPn iMp yTx aMs tinUs noitidnoC VH NI egatlovtupnI 007 V egatlovtneisnartkaeP 704e gatlovCAdeifitcerkaeP V HT VH NI dnuorgotdellupsietaGnehwegatlov0 45 40 5V V SG egatlovpmalcecruosotetaG0 1±5 1±0 2±V I SG Aµ001±= V ETAG egatlovpmalcdnuorgotetaG 810 24 2V V TUO 8-OSehtrofegatlovtuptuodetalugeR gulstaehhtiw 630RS7 9.20 3.33 6.3 V V ECRUOS V01= 730RS5 .40 0.50 5.5V ECRUOS V01= ∆V TUO V TUO noitalugerdaol0 20 21V m V ECRUOS ,V01= I daoL )1(Am05ot0= qerFy cneuqerfCAtupnI0 40 01z H (1) Load current on the regulated output must not cause SR03 power dissipation to exceed max ratings. Worst case power dissipation is given by: P V 185k (16V V IIN OUT OUT≈+ − × Ω Where IOUT is the load on the regulated output
Typical Performance Curves Gate Clamp Temperature (°C) HVIN (off) Temperature (°C) HVIN (V) HVIN (V) Vgate (V) HV Input Current IIN (µA) Load Regulation (SR037) VOUT (V) IOUT (mA) Regulator Output (SR037) VOUT (V) Source Voltage (V) Gate Voltage HVIN (V) VGate (V) -40 -10 20 50 80 110 140 -40 -10 20 50 80 110 140 0 5 10 15 20 25 0 1 02 03 04 05 06 07 0 80 0 50 100 150 200 250 300 350 400 300 600 900 1200 1500 1800 2100 0 1 02 03 04 05 0 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 5.05 -40 °C Source=15V 25°C Source=8V 25°C 25 °C 125 °C
The SR03x operates by controlling the conduction angle of the external MOSFET or IGBT as shown in Figure 1. When the rectified AC voltage is below the V TH threshold, the pass transistor is turned on. The pass transistor is turned off when the rectified AC is above HVIN(off). Output voltage (Vunreg) decays during the periods when the switch is off and when the rectified AC is below the output voltage. The amount of decay is determined by the load and the value of C1. Since the switch only conducts with low voltages across it, power dissipation is minimized. Switch ON VTH HVIN VREG VUNREG not to scale Figure 1: Typical Waveforms Power Dissipation Power dissipation in the SR03 is from 2 sources. The first is due to the bias current (or overhead) required to operate the device. This may be calculated from PBIAS = VIN 2 / 185ký where VIN is the input voltage in VRMS. The second source of power dissipation is the 3.3/5V linear regulator and may be calculated from PREG = (16V - VOUT) * IREG, where VOUT is 3.3V or 5V, and IREG is the load current on the 3.3/5V output. The total power dissipated by the SR03x is the sum of these two: PBIAS + PREG. (These equations are conservative – actual dissipation may be less.) To adequately dissipate the power, the underside plate of the SR03xSG should be soldered to at least 2cm 2 of exposed copper area on the PCB. Power is also dissipated by the pass transistor. Power dissipated by the transistor will be (16V * ITOTAL) * (1/Eff -1) where ITOTAL is the sum of the load currents on the regulated and unregulated outputs and Eff is the converter efficiency (see Efficiency Graph next pa ge). The transistor should be soldered to at least 5cm 2 of exposed copper area on the PCB for heatsinking. Transformers
180kΩ CG 220pF GN2470 GATEVIN SOURCE VREG 120/230VAC 50/60Hz GND EMI Suppressor SR03x VUNREG VREG 220μF (VN2460) 470μF (GN2470) CREG 1.0μF P6KE 400CA 1.0μF Using a MOSFET in place of an IGBT Efficiency and EMI Test Circuit PUNREG VN2460, no EMI VN2460, w/EMI GN2470, no EMI GN2470, w/EMI SR03 Efficiency (W) ycneiciffE SRO3 Efficiency Surge Protection SR036 or SR037 1.0µF SR036: VOUT=3.3V Regulated SR037: VOUT=5.0V Regulated ~18V Unregulated 120VAC or 230VAC VOUT VSOURCE Gate HVIN VN2460 270µF1.0µF
(with EMI Suppression Circuit)
208VAC/60Hz (230VAC/50Hz not available). Limits per CISPR 14-1 for household appliances. 25mA total load. Average Quasi-peak SR03 Circuit using GN2470 (no EMI Suppressor) 120VAC/60Hz Limits per 47CFR15.107 for Class B devices. 50mA total load. Hot Neutral Average Quasi-peak
SR03 Circuit using GN2470 (no EMI Suppressor) 120VAC/60Hz Limits per 47CFR15.107 for Class B devices. 100mA total load. Hot Neutral Average Quasi-peak
DOC #: DSFP-SR036SR037 B092005 8-Lead MSOP (with heat slug) Package Outline (SG) Dimensions in Inches (Dimensions in Millimeters) Measurement Legend = 0.1935 +/- 0.0035 (4.915 +/- 0.085) 0.1 +/- 0.01 (2.54 +/- 0.25) 0.0165 +/- 0.0035 (0.42 +/- 0.09) 0.14 +/- 0.01 (3.555 +/- 0.255) 0.1535 +/- 0.0035 (3.9) (+/- 0.09) 0.236 +/- .008 (5.995) (+/- 0.205) 0.05 +/- 0.01 (1.27 +/- 0.25) 0.0575 +/- 0.0065 (1.46 +/- 0.16) 0.055 +/- 0.005 (1.395 +/- 0.125) 0.0015 +/- .0025 (0.065 +/- 0.035) 0.033 +/- 0.017 (0.84 +/- 0.43) 0.0085 +/- 0.0015 (0.215 +/- 0.035) Heat Slug 8-Lead MSOP Package Outline (MG) 3.0° ± 3° 12°± 4° B 0.013 ± 0.005 (0.330 ± 0.127) D 0.116 ± 0.004 (2.946 ± 0.102) E 0.118 ± 0.004 (3.000 ± 0.102) H 0.193 ± 0.006 (4.902 ± 0.152) 0.004 ± 0.002 (0.102 ± 0.051) A0.040 ± 0.003 (1.016 ± 0.076) BSC0.0256 (0.650) e 0.0215 ± 0.006 (0.546 ± 0.152) L 0.006 ± 0.0003 (0.152 ± 0.0076) C Full Circle, or Half Circle,
www.supertex.com
1235 Bordeaux Drive · Sunnyvale · CA · 94089 · Telephone (408) 744-0100 · Fax (408) 222-4895
Technical Bulletin: SR03x Plate Connections This bulletin applies to the SR036 and SR037 in the SG (Power SO-8) package. Increased efficiency and lower no-load power consumption of SR03x based regulator circuits can be achieved by assuring no electrical connections are made to the underside plate on the SR03x package. A copper area should still be employed to provide needed heat sinking, however, this copper area should be electrically floating. For maximum heat sinking capability, do not cover the copper area with solder mask. Existing PCB layouts with the plate grounded should be corrected. Make no electrical connections to copper area Solder underside plate to copper area for heat sinking Early SR03x demo boards erroneously had the underside plate connected to ground. These boards will exhibit decreased efficiency and higher no load power. New, corrected demo boards may be ordered from Supertex’s web site.
RG180kΩ CG220pF VN2460 GATE VIN SOURCE VREG 120/230VAC 50/60Hz GND EMI Suppressor SR03x VUNREG VREG CUNREG220µF CREG1µF P6KE 400CA The values for RG and CG may need adjustment depending on the characteristics of the chosen MOSFET and the value of CUNREG. (Higher values of CUNREG generally produce higher EMI as capacitor recharge times are shorter.) The idea is to select values of R and C to soften the edges of the current pulse, as shown below. It may be tempting to forego CG, relying instead on the MOSFETs’ input capacitance. However, high dV/dt when power is first applied may cause the MOSFET to turn on due to CRSS, damaging the FET. CG protects against this possibility. Note that extending the turn-off time at the rising edge of the rectified AC increases the voltage drop across the FET, decreasing efficiency somewhat. www.supertex.com Technical Bulletin: SR03xEMI Reduction SR03-based power supplies may create conducted EMI into the AC power line that exceeds FCC and CISPR requirements. This bulletin describes one technique to reduce EMI, allowing SR03-based supplies to comply with applicable requirements. Conducted EMI is largely due to the short, high-current pulse imposed on the AC line when the pass MOSFET turns on. Smoothing out this current pulse reduces the harmonic content of the current drawn from the AC line, thus reducing conducted EMI. Placing a simple RC filter before the MOSFET gate smoothes out the pulse. AC Line Current – Turn-off Edge 500mA/div Without EMI Suppressor With EMI Suppressor EMI Suppressor Circuit
The following spectrums show the effect of the EMI suppression technique. Technical Bulletin: SR03x EMI Reduction 208VAC/60Hz (230VAC/50Hz not available) Limits per CISPR 14-1 for household appliances. 20mA total load. Quasi-peak Average 120VAC/60Hz Limits per 47CFR15.107 for Class B devices. 45mA total load. Live Neutral
IUNREG (mA) Load Regulation 120VAC/60Hz 208VAC/60Hz (230VAC/50Hz not available) The EMI reduction technique has an effect on power supply performance, as illustrated in the following graphs. Technical Bulletin: SR03x EMI Reduction without EMI suppressor with EMI suppressor 20% 30% 40% 50% Efficiency IUNREG (mA) Efficiency without EMI suppressor with EMI suppressor IUNREG (mA) Efficiency 10% 20% 30% 40% IUNREG (mA) without EMI suppressor with EMI suppressor VUNREG Load Regulation Efficiency
SR03x Power On Surge Protection When power is first applied to an SR03x circuit near the peak of the input sine wave, there is an instantaneous step of voltage at the HV IN terminal. The same step is applied to the pass element (MOSFET or IGBT). The parasitic capacitances in the pass element (MOSFET or IGBT) form a voltage divider circuit that applies an attenuated step to the gate of the pass element in the direction to turn on the pass element. If the input step voltage is large enough, the pass element will be turned on. The high impedance gate drive of the SR03x is not strong enough to shut down the pass element in time. The pass element will conduct high current while there is a large voltage across it. This over heats the pass element and destroys it. In turn, the SR03x is also destroyed. It has been reported that this power-on circuit destruction occurs frequently on 230VAC inputs and occasionally on 120VAC inputs. The protection circuit, shown below, controls the gate drive and clamps the current through the pass element to approximately 3 Amperes (exact current not critical). This allows the SR03x enough time to shut down the pass element. As shown in the circuit diagram, the surge protection requires only a resistor and a low cost NPN transistor (MPSA06 or equivalent). Power On Surge Protection Circuit Diagram SR03x Technical Bulletin A110204