IRF9522 SUTEX | Alldatasheet

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SUPERTEX INC o1 pe Baz73e%s goo1bas 49 | | IRF9522 Supertex inc. IRF 9923 R9522 : R9523 Objective : ® P-Channel Enhancement-Mode —-_ 37-25 Vertical DMOS Power FETs ,

Ordering Information

BVos5! | Fosiow Order Number / Package BYoos_| (max) 70-220 [cov [Tosa [sa | rnrosco | nosza_| [cov [asa [sa | varases | noses _| Features Advanced DMOS Technology

1 Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util

ir ize a vertical DMOS structure and Supertex’s well-proven silicon- © Low power drive requirement ‘gate manufacturing process. This combination produces devices © Ease of paralleling with the power handling capabilities of bipolar transistors and with ‘ it the high input impedance and negative temperature costticient ; 5 Low Cigg and fast swiiching speeds inherent in MOS devices. Characteristic of all MOS structures, Excellent thermal stability these devices are free from thermal runaway and thermally- © Integral Source-Drain diode induced secondary breakdown input i high gai Supertex Vertical DMOS Power FETs are ideally suited to a wide © High input impedance and high gain range of switching and amplifying applications where high break- | C._ Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and i fast switching speeds are desired. | Applications Package Options ' 1D Motor control 1D Converters © Amplifiers OQ Switches | Power supply circuits | Drivers (Relays, Hammers, Solenoids, Lamps, Sa ‘Memories, Displays, Bipolar Transistors, etc.) wan T0220 ry: ‘in out 2 (aad ‘i opto Pit) I Absolute Maximum Ratings iit s Drain-to-Source Voltage BV oss $P3 Bes Drain-to-Gate Voltage BV 65 Gate-to-Source Voltage #20V Operating and Storage Temperature “85°C to +150°C Soldering Temperature* 300°C “Distance of 1.6 mm from case for 10 seconds.

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. IRF9522/1RF9523/R9522/R9523 Thermal Characteristics ; 1 continuous)" | |, (pulsed) | Power Dissipation] 4, 4. Tor ‘ @T, = 25°C cw cw i TAFSS22 F Res22 -7.0A 1w 170 -0.55A “7.08 R9523 “7p eoninaaua eed by max ated, T-37-25 | Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) Symbol [Parameter [| Min [typ [Max [unit [Conditions IRF9522 B¥oss Drain-to-Source 9522. | 22° | v Vi = OV, Ip = -250uA Breakdown Voltage [inresas | co | fos = OV I = -250u R9523 [ toss | Gate Boy Lonage a Zero Gate Voltage Drain Current | -250 | Vos = 0; Vig = Max Rating : HA Vos = 0; Vog = 0-8 Max Rating To = 125°C ‘ON-State Drain Current Vos > Toxom X Fosiony Max Rating Vos = “10V Static Drain-to-Source Vog = -10V, |, =-3.5A Forward Transconductance Vos > logon X Rosiony MAX . Iy=-3.6A | Ses | tnputCapactance TT 480 | : Vag = 0, Vog = -25V | Goss | Common Source Output Capacitance ||| 380 | f21.0MHz Revere Taal Capacance a ee Tivo sy Te ee Yoo O58 ig i | tacrn | Tue-OFF Delay Time | 100 | R= 500 [yf Fattime 800 Diode Forward Voltage Drop [| | 80] VT, = 28°C, 1, =-5.0A, Va. = OV ty Reverse Recovery Time T, = 150°C, |, = -6.0A, egg = 100A/HS Neto AID. paramore 100% ied at 25% unaware Hated (Pave oat 30058 pee, 2 Gay oo) Nolo2: AIA. parameter sample ested Switching Waveforms and Test Circuit Yoo 80% RL : 10%. "ruse tout A | genenaron | SCORE i t DUT. i opt ! ; soa 10% 10% I ! i o+ sort favre 1 FF ¥ 9-4