IRF9521 SUTEX | Alldatasheet
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Technical content
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- IRF9521 Supertex inc. R9521 - = Preliminary, ® P-Channel Enhancement-Mode 7-37-? Vertical DMOS Power FETs
Ordering Information
BVis5/ Tom ‘Order Number / Package BVoos (min) [770-220] to82 | [sev [ean | oon | rerosar | _noser_| Features Advanced DMOS Technology © Freedom from secondary breakdown These enhancement-mode (normaily-off) power transistors util- ize a vertical DMOS structure and Supertex's well-proven silicon- © Low power drive requirement gate manufacturing process. This combination produces devices © Ease of paralleling with the power handling capabilities of bipolar transistors and with
0 Low Cc, and fast switching speeds the high input impedance and negative temperature coefficient
‘ss . inherent in MOS devices. Characteristic of all MOS structures, . © Excellent thermal stability these devices are free from thermal runaway and thermally- © Integral Source-Drain diode induced secondary breakdown. High input impedance and high gain Supertex Vertical DMOS Power FETs are ideally suited to a wide S| _ range of switching and amplifying applications where high break- down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. | Applications Package Options Motor contro! O Converters © Amplifiers . s OO Switches © Power supply circuits G_ Drivers (Relays, Hammers, Solenoids, Lamps, aos Memories, Displays, Bipolar Transistors, etc.) oe wan 10-220 te fOR ‘option: P11) CT) Absolute Maximum Ratings i Wy Drain-to-Source Voltage BV pes Drain-to-Gate Voltage BV os sos Bs Gate-to-Source Voltage £20V Operating and Storage Temperature -55°C to +150°C. Soldering Temperature* 300°C. “Distance of 1.6 mm from case for 10 seconds. O41
SUPERTEX INC __ OL pe Pazzaeas goo1ba4 7 I IRF9521/R9521 Thermal Characteristics . 1, (continuous)* Power Dissipation] &, oe, Toru” t @T, = 26°C °C) °C [iRrosay TT -60q 24 0R ow bo a2 6 0A [28.08 i [Roser Tosa Taw testo oa | 75a | i “lp (continuous) is limited by max rated T,. 7-3 7-25 j . | Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) | [_Svmbor" [Parameter Min [typ | Max | Unit_[ Conditions Drain-to-Source Breakdown Voege | 0 [TT VT Vag hp= 250A | Gate Threshold Voliage [20] | 40] VT Voo= Vos l= 250A | |_'ess | Gate Body Leakage [00 nT Veg = #200, Vg = Max Rating loss. Zero Gata Voltage Drain Current | -250 | Vos = 9, Vpg = Max Rating HA Vos = 0, Vos = 0.8 Max Rating Ty = 125°C ‘ON-State Drain Current A Vos = “10 Vos > !oron ¥ Rasiom Max Rating Static Drain-to-Source Veg = -10V, Ip = -3.5A : ON-State Resistance Forward Transconductance Vos > !oxony X Rosin Max 1, =-3.5A | Css | MmputCapactance = | CT [ Coss | Common Source Ouiput Capacitance [| [380 | pees 087 28 f=1MHz : Reverse Transfer Capacitance r_|_ | 1 | | ton | Tum-ON Delay Time re ee | ee veo 08a | acer | Twn OFF Delay Tine a Rson R, = 500 [oy atime 0] Diode Forward Voltage Drop | [63 [vv] Veg = 0V, Ig = 6.08, To = 26°C t Reverse Recovery Time T, = 150°C, [p= -6.0A, logy» 100AuS Neto 1 AID. patente 100% osod at 25O oles Orewa Hato. (Pus oa A0Dp po, Bday Oyo) Nol 2: AAS. parameters sample tested. Switching Waveforms and Test Circuit Yoo oor me 10%. purse Int Pe) | generator | SCOPE ! i DUT, voit | i wa 10% 10% I | i ¥ oo" fer, to > + + | 9-2 |