IRF531 SUTEX | Alldatasheet
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SUPERTEX INC OL pe Wazzaess ooo1s84 3 T $F = LS IRF531 7) Supertex inc. R531 Preliminary ® N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVos5/ loom ‘Order Number / Package PVoos (min) [- toa9 T1082 | ter [eee [eon esr [| Features Advanced DMOS Technology Freedom from secondary breakdown ‘These enhancement-mode (normally-off) power transistors utll- , ize avertical DMOS structure and Supertex's wall-proven silicon Low power drive requirement gate manufacturing process. This combination produces devices © Ease of paralleling with the power handling capabilities of! bipolar transistors. and with the high input impedance and negative temperature coefficient C1 Low Cig and fast switching speeds Foe i wloS devices. Charactoritic of all MOS structures, DM (1D Excellent thermal stability these devices are free from thermal runaway and thermally- (2 Integral Source-Drain diode induced secondary breakdown. . 7 ‘Supertex Vertical DMOS Power FETs are ideally sulted to a wide 1D High input impedance and high gain range of switching and amplitying applications where high break- f down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options
1 Motor control
© Amplifiers Switches | © Power supply circuits CO Drivers (Relays, Hammers, Solenoids, Lamps, Gps i jisplays, Bipole 5, etc.) ‘TO-92 Memories, Displays, Bipolar Transistors, etc.) wint0-220 = (iad band cS pion: P43) | Absolute Maximum Ratings 1 iit Drain-to-Source Voltage BV gs, gos aos Drain-to-Gate Voltage BV as Tow rome Gate-to-Source Voltage +20V ‘Operating and Storage Temperature -5B°C to +150°C Soldering Temperature 300°C “Distance of 1.6 mm from case for 10 seconds. 8-16
SU E aes | PERTEX INC OL De —S773295 ooo1sas & . IRF531/R531 Thermal Characteristics 7-35-25 1 (continuous)* Power Dissipation Oe lon laut @T, = 25°C cw [iarsst | toa | Seon | vow <*[ a0 ata [140A [S008 | : [rest tsa tsa | tw iY so as | sa | 500 | i “ip entncou) ed by axe, , i i Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [“Symbor_] Parameter | (Min | Typ [ Max [Unit [Conditions Drain-to-Source Breakdownvotage [60 [| [VT Vag= 0114 = 250A Geta Trreehoid Vonage [20 [| 0 TV | Vos = Vou bo = 25000 [toss ___|_ Gate Body Leakage a Zero Gate Voltage Drain Current | 250 | Vos = 0: Vos = Max Rating Vas = 0; Vpg = 0.8 Max Rating T= 125°C ‘ON-State Drain Current Vos = 10V Vos > loyora X Posionn Max Rating . Static Drain-to-Source Vee = 10V, ly = 8.04 ON-State Resistance os ° Forward Transconductance Vos > !orory ¥ Roscony Max Rating 1, =8.0A [Cas | MeutCapactancs V.. «oV,V..= 25V [Gass | Camean Source Output Capactance [| [SO] Ff gy Reverse Transfer Capscliance re ee | | tao | Turn-ON Delay Time a | ee oe texan | Turn-OFF Delay Time y= 4.0A hee} | Neo OOverneire Vso Diode Forward Voltage Drop [aay Vas = OV, Igy = 1A [23 | Veg = OV, leg = 8A H ty Reverse Recovery Time T, = 160°C, |, =8.0A, : lpg = 00S Nae 1 AID. parame 100: osiod a °C ures ceri aed (Ube 00pa ple, 2 yoy) Not2: AIAG. parlors sample tered Switching Waveforms and Test Circuit Yoo cor me trp 1% ro pute 7 ™ NOrr | GENERATOR | S00rE i 1 DUT. wom, «| fior | ouput ! ' won 10% 10% 1 1 t + cou) hor Lot > = = B16