PZD502CMA

PZD502CMA UNIKC | Alldatasheet

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N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. Operating Junction & Storage Temperature Range SYMBOL Junction-to-Ambient MAXIMUM 183 TYPICAL TA = 25 ° C ID 20V TA = 25 ° C TA = 70 ° C Power Dissipation RDS(ON) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 450mΩ @VGS = 4.5V 1A SYMBOL VDS Continuous Drain Current THERMAL RESISTANCE RqJA Pulsed Drain Current1 TA = 70 ° C LIMITS -55 to 150 W UNITS 0.7 V A ID IDM VGS PD TJ, TSTG 0.4 0.6 REV 1.0 1 2014/9/1

N-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.35 0.6 1 ± 30 mA 5 A 384 850 274 765 213 450 2 S 1.4 0.4 0.8 0.9 A 1.2 V 233 nS 630 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VDS = 5V, VGS = 4.5V VGS = 2.5V, ID = 0.5A Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 16V, VGS = 0V VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 8V PARAMETER VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS STATIC LIMITS UNITSSYMBOL TEST CONDITIONS V IGSS IDSS mA Drain-Source Breakdown Voltage VGS = 1.8V, ID = 0.35A On-State Drain Current1 ID(ON) VDS = 10V, VGS = 0V , TJ = 55 ° C Gate Threshold Voltage Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 0.6A Total Gate Charge2 Gate-Source Charge2 Crss VGS = 0V, VDS = 4.5V, f = 1MHz pF Ciss CossOutput Capacitance Reverse Transfer Capacitance Input Capacitance Qg Qgs Qgd VDS = 0.5V(BR)DSS, VGS = 4.5V, ID = 0.6A nC mΩ DYNAMIC gfs VDS = 5V, ID =0.6A Turn-On Delay Time2 Turn-Off Delay Time2 td(on) td(off) Rise Time2 Gate-Drain Charge2 Fall Time2 tf tr VDS = 6V, ID @ 0.6 A, RGS= 6Ω,VGS = 4.5V ns Reverse Recovery Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current Forward Voltage1 IS Reverse Recovery Charge trr Qrr VDS =12V, IF = 2A,dIF/dt = 100 A/ms IF = 0.15A, VGS = 0VVSD REV 1.0 2 2014/9/1

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 3 2014/9/1

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 4 2014/9/1

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/9/1