PA110BDA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Junction-to-Ambient RqJA 62.5 ° C / WRqJC UNITS 9.2 ID IDM SYMBOL LIMITS A V 50 W SYMBOL °C-55 to 150 MAXIMUM THERMAL RESISTANCE Avalanche Energy Junction & Storage Temperature Range mJ 2.5 TYPICAL ID TC = 25 ° C 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS ± 20 Pulsed Drain Current1 Avalanche Current IAS 5.4 TC = 25 ° C EAS Junction-to-Case RDS(ON) 105mΩ @VGS = 10V 15A PD 100 V VGSGate-Source Voltage TC = 100 ° CPower Dissipation Tj, Tstg Drain-Source Voltage VDS L =1mH 14.8 REV 1.4 1 2018/4/24

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 1.8 3 ± 100 nA 81 120 77 105 20 S 592 1.3 Ω 13.9 4.7 15 A 1.4 V 25 nS 25 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = 6A, dl/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss pF VDS = 10V, ID = 6A nCQgs mA Drain-Source Breakdown Voltage VVDS = VGS, ID = 250mA UNITSLIMITS STATIC TEST CONDITIONS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 6A, VGS = 0V nSVDS = 50V, ID @ 6A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage DYNAMIC Rise Time2 VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125 ° C Ciss Qgd Output Capacitance VGS = 0V, ID = 250mAV(BR)DSS Qg(VGS=10V) VDS = 50V, ID = 6A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 4.5V, ID = 6A VGS = 0V, VDS = 25V, f = 1MHz Gate-Body Leakage VGS(th) Total Gate Charge2 Qg(VGS=4.5V) Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 6A Forward Transconductance1 PARAMETER SYMBOL mΩ Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Input Capacitance Zero Gate Voltage Drain Current IGSS gfs REV 1.4 2 2018/4/24

N-Channel Enhancement Mode MOSFET REV 1.4 3 2018/4/24

N-Channel Enhancement Mode MOSFET REV 1.4 4 2018/4/24

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.4 5 2018/4/24

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.4 6 2018/4/24

N-Channel Enhancement Mode MOSFET REV 1.4 7 2018/4/24

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.4 8 2018/4/24