PB6C4JU UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 TDFN 2X3-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air environment with TA =25° C. Gate-Source Voltage ID Avalanche Energy3 TA= 70° C Junction & Storage Temperature Range SYMBOL Pulsed Drain Current1 Avalanche Current IAS 13 EAS THERMAL RESISTANCE TYPICAL PD ID TA = 25 ° C 20V Continuous Drain Current TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 19.5mΩ @VGS = 4.5V 7A Drain-Source Voltage TA= 25 ° C Power Dissipation Tj, Tstg 8.5 mJ 1.2 IDM SYMBOL LIMITS A VVGS VDS V UNITS MAXIMUM Junction-to-Ambient2 1.8 °C-55 to 150 W RqJA REV 1.0 1 2015/11/17

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.35 0.8 1 ± 30 uA 14.8 19.5 15.3 23 16.5 24.5 18.6 28 28 40 30 S 593 111 8.2 0.7 1.5 A 1.2 V 10 nS 2.6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VGS = 4.5V, ID = 3A SYMBOL Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS = 5V, ID = 3A Input Capacitance Qgd VDS = 10V, ID = 3A Output Capacitance Qg(VGS=4.5V) gfs PARAMETER tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 tr nCQgs TEST CONDITIONS VSD nSVDD = 10V ID @ 3A, VGS = 4.5V, RGS = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) td(off) IF = 3A, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time V(BR)DSS pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 10V, f = 1MHz mΩ mA DYNAMIC IF = 3A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 8V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA IS VDS =16V, VGS = 0V trr VGS = 3.8V, ID = 3A VGS = 3.1V, ID = 3A UNITS VDS = 10V, VGS = 0V, TJ = 125° C Total Gate Charge2 Qg(VGS=3.8V) Drain-Source On-State Resistance1 RDS(ON) VGS = 1.8V, ID = 3A VGS = 2.5V, ID = 3A Gate-Body Leakage VGS(th) Forward Transconductance1 REV 1.0 2 2015/11/17

Dual N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/11/17

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/11/17

Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/11/17

Dual N-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：D7 ) B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2015/11/17

Dual N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/11/17

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/11/17