PA110BC UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature.
2 The value of RqJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA TA = 100 ° C THERMAL RESISTANCE SYMBOL PD TJ, TSTG TA = 25 ° C RqJA Operating Junction & Storage Temperature Range TYPICAL 2.5 3.9 MAXIMUM Power Dissipation3 SYMBOL LIMITS IAS Pulsed Drain Current1 11.5 4.8Avalanche Current EAS RDS(ON) TA = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 110mΩ @VGS = 10V 4A ID 100V ID IDM Junction-to-Case Continuous Drain Current Avalanche Energy VGS 4TA = 25 ° C L = 0.1mH V A RqJC UNITS 3.5 ± 20 °C-55 to 150 mJ W ° C / W REV 1.0 1 2015/7/9
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 1.8 3 ± 100 nA 86 120 81 110 22 S 573 1.5 Ω 13.6 4.6 2.8 A 1.4 V 21 nS 14 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Reverse Recovery Time IF = 4A, dl/dt = 100A / mS VSD Fall Time2 Forward Voltage1 mΩDrain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 4A VDS = 80V, VGS = 0V , TJ = 125 ° C nSVDS = 50V, ID@ 4A, VGS = 10V, RGS = 6Ω td(on) tr td(off) tf TEST CONDITIONS Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 QrrReverse Recovery Charge Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 4A, VGS = 0V IS VGS = 0V, VDS = 25V, f = 1MHz Reverse Transfer Capacitance trr Drain-Source Breakdown Voltage VGS = 4.5V, ID = 4A VDS = 5V, ID = 4A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Qg(VGS=4.5V) Ciss Coss Crss Qgd Qgs gfs Gate Threshold Voltage DYNAMIC V IGSS pF VDS = 80V, VGS = 0V Gate-Body Leakage Input Capacitance IDSS VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Zero Gate Voltage Drain Current STATIC LIMITS UNITS Total Gate Charge2 VDS = 50V,ID = 4A nC Qg(VGS=10V) mA PARAMETER SYMBOL REV 1.0 2 2015/7/9
N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/7/9
N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/7/9
N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/7/9
N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:1000pcs/Reel REV 1.0 6 2015/7/9
N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/7/9
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/7/9