P1210BVA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. Junction-to-Case RqJC Junction-to-Ambient2 Tj, Tstg SYMBOL ID PD RqJA Pulsed Drain Current1 Avalanche Current Power Dissipation EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TA =70 ° C Junction & Storage Temperature Range L = 1mH ID TA = 25 ° C 100V Continuous Drain Current TA = 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 12mΩ @VGS = 10V 8.7A Gate-Source Voltage Drain-Source Voltage TA= 25 ° C V W UNITS 6.9 112 mJ 1.3 100 IDM SYMBOL 8.7 LIMITS A VVGS VDS ± 20 IAS ° C / W °C-55 to 150 MAXIMUM REV 1.0 1 2016/12/27

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.4 1.8 2.4 ± 100 nA 0.1 11.4 15 9.7 12 25 S 2108 205 2 Ω 6.1 7.4 1.6 A 1.2 V 55 nS 70 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) Zero Gate Voltage Drain Current IGSSGate-Body Leakage VGS(th) Drain-Source Breakdown Voltage V mΩ VGS = 4.5V, ID = 8A SYMBOL UNITS VGS = 10V, ID = 8A VGS = 0V, VDS = 0V, f = 1MHz Gate-Drain Charge2 VDS = 80V, VGS = 0V, TJ = 125 ° C PARAMETER Input Capacitance Qgd Output Capacitance Qg Forward Transconductance1 Total Gate Charge2 Gate Resistance td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS IF = 8A, VGS = 0V nSVDS = 50V, ID @ 8A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr Diode Reverse Recovery Charge Continuous Current Forward Voltage1 Diode Reverse Recovery Time IS VSD trr Gate Threshold Voltage VDS = VGS, ID = 250mA LIMITS VGS = 0V, ID = 250mA VGS = 0V, VDS = 50V, f = 1MHz VDS = 80V, VGS = 0V gfs Ciss VDS = 5V, ID = 8A nCQgs mA pF STATIC DYNAMIC Gate-Source Charge2 Reverse Transfer Capacitance IF = 8A, dl/dt = 100A /mS VDS = 0V, VGS = ± 20V IDSS Coss Crss Rg VDS = 50V , VGS = 10V, ID = 8A Qrr REV 1.0 2 2016/12/27

N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/12/27

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/12/27

N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/12/27

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2016/12/27

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/12/27

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/12/27