PA520BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. Avalanche Energy L = 0.1mH EAS 15 mJ Junction-to-Case RqJC 40 ° C / W IAS 17 A Avalanche Current SYMBOL Pulsed Drain Current1 MAXIMUMTHERMAL RESISTANCE Operating Junction & Storage Temperature Range SYMBOL PD TJ, TSTG VGS TA = 25 ° C RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 20mΩ @VGS = 10V 6.3A ID 30V Continuous Drain Current TA = 25 ° C RqJA 98 ± 20 V ID IDM TYPICAL 0.8 -55 to 150 6.3 LIMITS 1.2 Junction-to-Ambient2 TA = 70 ° C Power Dissipation W UNITS 4.7 REV 1.0 1 2017/2/22

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.4 2.5 ± 100 nA 15.3 20 18.2 25 41 S 496 14.4 1.6 3.9 6.3 A 1 V 10.7 nS 2.6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6.3A Ω Forward Voltage1 VSD IF = 6.3A, VGS = 0V tr IS Total Gate Charge2 Qg(VGS=4.5V) Reverse Recovery Time trr IF = 6.3A, dIF/dt=100A/ms VGS = 0V Qg(VGS=10V) Qgs Qgd td(on) Continuous Current2 Reverse Recovery Charge Qrr nC nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 td(off) tf Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 VDD = 15V ID @ 6.3A, VGS = 10V, RGEN = 6Ω Gate-Source Charge2 VDS = 15V,ID = 6.3A Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss VGS = 0V, VDS = 25V, f = 1MHz STATIC LIMITS UNITSPARAMETER SYMBOL TEST CONDITIONS VDS = 20V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = 250mAGate Threshold Voltage gfs pF Ciss Coss VGS(th) VDS = 5V, ID = 6.3A DYNAMIC V IGSS IDSS mA Drain-Source Breakdown Voltage VGS = 10V, ID = 6.3A Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 0V, VGS = ± 20V VDS = 24V, VGS = 0V REV 1.0 2 2017/2/22

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/22

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N-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：72 ) B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2017/2/22

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/22

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/22