PA110BL UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. TA = 25 ° C 3.2 Junction-to-Case RqJC 14 50RqJA ° C / W Pulsed Drain Current1 2.2 6.6IAS EAS IDM Avalanche Energy L = 0.1mH Avalanche Current RDS(ON) TA = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID 110mΩ @VGS = 10V 3A TC = 25 ° C 2.5Power Dissipation Junction-to-Ambient2 Operating Junction & Storage Temperature Range PD TJ, TSTG THERMAL RESISTANCE SYMBOL MAXIMUM LIMITS V A mJ -55 to 150 W TA = 25 ° C TA = 100 ° C TYPICAL 100V UNITS ± 20 Continuous Drain Current ID SYMBOL VGS REV 1.0 1 2014/6/27

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 1.8 3 ± 100 nA 85 120 80 110 22 S 579 1.4 Ω 1.8 4.6 1.7 A 1.4 V 22 nS 15 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS Reverse Recovery Time trr IF = 6A, dl/dt = 100A / μS Reverse Recovery Charge Qrr Forward Voltage1 VSD IF = 6A, VGS = 0V Turn-On Delay Time2 td(on) VDS = 50V, ID @ 6A VGS = 10V, RGS = 6Ω nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Total Gate Charge2 Qg Gate Resistance Rg VDS = 50V, VGS = 10V, ID = 6A nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd SYMBOL TEST CONDITIONS STATIC LIMITS UNIT Gate-Body Leakage Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) IGSS VGS = 0V, ID = 250mAV(BR)DSS mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V , TJ = 125 ° C VDS = 80V, VGS = 0V V PARAMETER RDS(ON) VGS = 10V, ID = 6A VGS = 4.5V, ID = 6A mΩ Forward Transconductance1 gfs VDS = 5V, ID = 6A Drain-Source On-State Resistance1 VGS = 0V, VDS = 0V, f = 1MHz DYNAMIC VGS = 0V, VDS = 25V, f = 1MHz pFOutput Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance Ciss REV 1.0 2 2014/6/27

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/6/27

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/6/27

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/6/27