PA597BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. 3The Power dissipation is based on RqJA t ≦10s value. Junction-to-Ambient2 Steady-State Power Dissipation3 W UNITS -16 -4.3 ± 12 -5.3 A RqJA LIMITS 1.4 TA = 70 ° C V ID IDM TYPICAL 0.9 -55 to 150 RqJA 130 ° C / WJunction-to-Ambient2 t ≦10s RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 30mΩ @VGS = -10V -5.3A ID -20V Continuous Drain Current TA = 25 ° C SYMBOL Pulsed Drain Current1 MAXIMUMTHERMAL RESISTANCE Operating Junction & Storage Temperature Range SYMBOL PD TJ, TSTG VGS TA = 25 ° C REV 1.1 1 2018/8/7

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.7 -0.8 -1.3 ± 100 nA -10 25 30 30 43 40 58 16 S 801 115 8.7 5.4 1.2 2.6 -1 A -1.3 V 24 nS 6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) VGS = -2.5V, ID = -3.5A STATIC mA mΩ gfs Drain-Source Breakdown Voltage VGS = -10V, ID = -3.5A VGS = 0V, ID = -250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 0V, VGS = ± 12V VDS = -16V, VGS = 0V VDS = VGS, ID = -250mAGate Threshold Voltage pF Ciss Coss VGS(th) VDS = -5V, ID = -3.5A DYNAMIC VGS = -4.5V, ID = -3.5A Forward Transconductance1 V IGSS IDSS UNITSPARAMETER SYMBOL TEST CONDITIONS LIMITS VDS = -10V , VGS =-4.5V, ID = -3.5A Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss VGS = 0V, VDS = -10V, f = 1MHz VDS = -10V, VGS = 0V , TJ = 55 ° C Qrr nC nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 td(off) tf Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Reverse Recovery Time trr IF =-3.5A, dIF/dt=100A/ms Qg(VGS=2.5V) Qgs Qgd td(on) Continuous Current Reverse Recovery Charge Forward Voltage1 VSD IF = -3.5A, VGS = 0V tr IS Total Gate Charge2 Qg(VGS=4.5V) Turn-Off Delay Time2 VDD = -10V,ID @ -3.5A, VGS = -4.5V, RG = 6Ω Gate-Source Charge2 REV 1.1 2 2018/8/7

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P-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：6W ) B. Tape&Reel Information:3000pcs/Reel REV 1.1 6 2018/8/7

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P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2018/8/7