PA010BV UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. Tj, Tstg SYMBOL ° C / W THERMAL RESISTANCE ID PD RqJA Pulsed Drain Current1 Avalanche Current Power Dissipation Junction & Storage Temperature Range L = 1mH 1.8 RqJC EAS IAS IDM SYMBOL Avalanche Energy TYPICAL TA =70 ° C ID TA = 25 ° C 100V Continuous Drain Current TA = 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 100mΩ @VGS = 10V 3A Gate-Source Voltage Drain-Source Voltage TA= 25 ° C W UNITS 2.2 18 mJ 1.2 100 LIMITS A VVGS VDS ± 20 V °C-55 to 150 MAXIMUM Junction-to-Ambient Junction-to-Case REV 1.0 1 2017/1/11

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 84 120 79 100 18 S 570 1.3 Ω 13.6 2.1 4.8 1.3 A 1.4 V 22 nS 15 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IGSSGate-Body Leakage VGS(th) Drain-Source Breakdown Voltage V mΩ VGS = 4.5V, ID = 3A SYMBOL UNITS VGS = 10V, ID = 3A VGS = 0V, VDS = 0V, f = 1MHz Gate-Drain Charge2 VDS = 80V, VGS = 0V, TJ = 125 ° C PARAMETER Qgd Output Capacitance Qg Forward Transconductance1 Gate Resistance Gate-Source Charge2 Total Gate Charge2 Reverse Transfer Capacitance Input Capacitance Drain-Source On-State Resistance1 RDS(ON) td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS IF = 3A, VGS = 0V nSVDS = 50V, ID @ 3A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr Diode Reverse Recovery Charge Continuous Current Forward Voltage1 Diode Reverse Recovery Time IS VSD trr Gate Threshold Voltage VDS = VGS, ID = 250mA LIMITS VGS = 0V, ID = 250mA VGS = 0V, VDS = 25V, f = 1MHz VDS = 80V, VGS = 0V gfs Ciss VDS = 5V, ID = 3A Zero Gate Voltage Drain Current nCQgs mA pF STATIC DYNAMIC IF = 3A, dl/dt = 100A /mS VDS = 0V, VGS = ± 20V IDSS Coss Crss Rg VDS = 50V , VGS = 10V, ID =3A Qrr REV 1.0 2 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/11

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/11

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/11