PTH31002 ERICSSON | Alldatasheet

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/G101 PTH 31002 30 Watts, 1.9–2.0 GHz 50-Ohm Power Hybrid Package A Typical Output Power vs. Input Power Input Power (W) Output Power (W)

1.96 GHz

1.99 GHz 1.93 GHz VDD = 28.0 V TCASE = +25ºC

Description

The PTH 31002 is a 50–ohm power hybrid intended for applications requiring linear power amplification in the PCS frequency range. The part is designed to operate with 50–ohm source and load impedances and includes bias circuitry with temperature compensation. The design is intended to simplify system design and save space with an overall size of less than one square inch.  Guaranteed Performance at 1.93 to 1.99 GHz, 28 V - Output Power = 30 Watts (P-1dB) Min - Power Gain = 12 dB Min - Efficiency = 30% Min @ P-1dB  Rugged Hybrid Design  High Single Stage Gain  Excellent Linearity  Input VSWR less than 1.5:1  Full Gold Metallization  100% Lot Traceability /G101 31002 A-12345699XX Performance Characteristics Parameter VDD = 28.0 V, IDQ (Typical) = 550 mA Symbol Min Typ Max Units Frequency Range f 1930 — 1990 MHz Power Gain G p 12 14 — dB Output Power at 1 dB Compressed P-1dB 30 34 — W Input VSWR /G121 — 1.25:1 1.5:1 — Efficiency at P-1dB /G104 30 35 — % All published data at TCASE = 25°C unless otherwise indicated.

/G101 Typical Performance Power Gain vs. Output Power 0 1 02 03 04 05 0 Output Power (W) Power Gain (dB) 1.96 GHz1.93 GHz

1.99 GHz

VDD = 28.0 V TCASE = +25ºC 19 22 25 28 Supply Voltage (V) TCASE = +25ºC

1.93 GHz

Output Power (W) Output Power (at P-1dB) vs . Supply Voltage Efficiency vs. Output Power (at constant voltage) 5 1 01 52 02 53 03 54 0 Output Power (W) Efficiency (%) TCASE = +25ºC VDD = 28.0 V Efficiency vs. Output Power (at constant frequency) 5 1 01 52 02 53 03 54 0 Output Power (W) Efficiency (%) TCASE = +25ºC f = 1.96 GHz 22 V 25 V 28 V Maximum Ratings Parameter Symbol Value Unit Supply Voltage V DD 32 Vdc Bias Current I DQ 1000 mA Operating Current — 4.5 A Operating Temperature T CASE 90 °C Total Device Dissipation at TCASE = 25°CP D TBD Watts Above 25°C derate by W/°C Storage Temperature T STG 125 °C

/G101 Gain and Return Loss vs. Frequency -30 -25 -20 -15 -10 1.85 1.9 1.95 2 2.05 F requency (G Hz) Return Loss (dB) Gain (dB) TCASE = +25ºC POUT = 1.4 W VDD = 28.0 V Gain Return Loss Small Signal Gain vs.Supply Voltage 12 16 20 24 28 Supply Voltage (V) Small Signal Gain (dB) TCASE = +25ºC POUT = 1.4 W -75 -65 -55 -45 -35 -25 0 5 10 15 20 25 30 35 Output Power (Watts PEP) IMD (dBc) 3rd Order 5th Order 7th Order Intermodulation Distortion vs. Output Power VDD = 28.0 V, TCASE = 25ºC f = 1.96 GHz, ∆f = 100 KHz IMD3 vs. Supply Voltage -55 -45 -35 -25 -15 19 22 25 28 Supply Voltage (V) IMD3 (dBc) POUT = 30 W PEP POUT = 16 W PEP POUT = 8 W PEP POUT = 4 W PEP f = 1.96 GHz, ∆f = 100 KHz TCASE = 25ºC IMD vs . Quiescent Current -75 -70 -65 -60 -55 -50 -45 490 540 590 640 Quiescent Current (mA) IMD (dBc) 3rd Order 5th Order 7th Order f = 1.96 GHz, ∆f = 100 KHz TCASE = 25ºC, POUT = 4 W(PEP) Phas e Delay vs . Frequency 1.5 2.0 2.5 3.0 Frequency (GHz) Phase Delay (ns) TCASE = +25ºC POUT = 1.4 W

/G101 Schematic Phas e Linearity vs . Temperature 0.5 0.6 0.7 0.8 0.9 1.0 -20 0 20 40 60 80 100 Temperature (ºC) Phase Linearity (deg.) VDD = 28.0 V POUT = 1.4 W Quiescent Current vs. Bias Voltage 200 400 600 800 1000 1200 9 1 01 11 21 3 Bias Voltage (V) Quiescent Current (mA) TCASE = +25ºC VDD = 28.0 V

/G101 Case Outline Specifications Package 20237 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA Specifications subject to change without notice. LP © 1998 Ericsson Inc. EUS/KR 1522-PTH 31002 Uen Rev. A 4-09-01 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com\\rfpower