PTF10015 ERICSSON | Alldatasheet

Document overview

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Technical content

Features

  • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ
  • Full Gold Metallization
  • Silicon Nitride Passivated
  • Excellent Thermal Stability
  • Back Side Common Source
  • 100% lot traceability
  • Available in Package 20222 as PTF 10031 10031 A-1234569743 10015 A-1234569914

Description

The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation P D 175 Watts Above 25°C derate by 1.0 W/°C Storage Temperature Range T STG -65 to +150 °C Thermal Resistance (TC = 70°C) R qJC 1.0 °C/W All published data is at TC = 25°C unless otherwise indicated.

Gain vs. Power Output 0 1 02 03 04 05 06 07 0 Power Output (Watts) Gain (dB) VDD = 28 V IDQ = 380 mA f = 960 MHz Intermodulation Distortion vs. Power Output -55 -45 -35 -25 -15 0 1 02 03 04 05 06 07 0 Output Power (Watts PEP) IMD (dB) VDD = 28 V IDQ = 380 mA f1 = 950.000 MHz f2 = 950.100 MHz 3rd 5th 7th Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V (BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V I DSS — — 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 3 A g fs 2.0 2.8 — Siemens RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) G ps 12.0 13.0 — dB Power Output at 1 dB Compression DD = 28 V, IDQ = 380 mA, f = 960 MHz) P-1dB 50 — — Watts Drain Efficiency DD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) h 50 55 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz— Y — — 10:1 — all phase angles at frequency of test) Typical Performance

Frequency Z Source W Z Load W MHz R jX R jX 850 1.38 -1.22 2.50 1.00 900 1.20 -0.44 2.45 1.65 950 1.08 +0.67 2.40 2.33 1000 0.96 +1.30 2.40 2.90 Output Power vs. Supply Voltage 22 24 26 28 30 32 34 Drain-Source Voltage (Volts) Output Power (Watts) IDQ = 380 mA f = 960 MHz Broadband Gain vs. Frequency 925 930 935 940 945 950 955 960 Frequency (MHz) Gain (dB) VDD = 28 V IDQ = 380 mA POUT = 50 W Z0 = 50 W Z Source Z Load G S D Capacitance vs. Supply Voltage 100 120 140 160 0 1 02 03 04 0 Supply Voltage (Volts) Cds & Cgs (pF) Crss (pF) Cgs Cds Crss VGS = 0 V f = 1 MHz Impedance Data (circuit optimized at 960 MHz) VDD = 28 V, POUT = 50 W, IDQ = 380 mA Bias Voltage vs . Temperature 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Temp. (°C) Bias Voltage (V) 0.43 1.25 2.08 2.9 3.71 4.53 Voltage normalized to 1.0 V Series show current (A)

Typical Scattering Parameters (VDS = 28 V, ID = 1.0 A) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 40 0.883 -153 33.0 93 0.014 3 0.527 -143 60 0.878 -160 21.8 85 0.013 1 0.533 -148 80 0.876 -163 16.1 80 0.012 -6 0.553 -150 100 0.884 -164 12.8 76 0.012 -13 0.574 -148 150 0.904 -165 8.21 65 0.011 -18 0.638 -148 200 0.915 -165 5.67 58 0.010 -23 0.694 -149 250 0.934 -164 4.36 51 0.010 -31 0.769 -148 300 0.947 -164 3.41 45 0.010 -31 0.792 -149 350 0.962 -163 2.78 41 0.008 -28 0.837 -150 400 0.975 -163 2.30 36 0.008 -33 0.873 -151 450 0.974 -163 1.90 33 0.006 -36 0.874 -151 500 0.977 -163 1.65 30 0.006 -52 0.912 -152 550 0.979 -164 1.44 27 0.005 -46 0.916 -154 600 0.985 -164 1.28 26 0.004 -53 0.925 -154 650 0.981 -165 1.14 22 0.003 -27 0.933 -156 700 0.980 -166 1.01 21 0.004 -18 0.933 -157 750 0.975 -167 0.924 19 0.003 -13 0.936 -158 800 0.973 -168 0.809 16 0.001 14 0.946 -160 850 0.972 -170 0.749 14 0.003 -1 0.939 -160 900 0.969 -171 0.656 12 0.003 30 0.946 -162 950 0.966 -173 0.609 14 0.002 53 0.948 -164 1000 0.969 -174 0.564 8 0.003 59 0.945 -164 1050 0.969 -176 0.526 3 0.004 56 0.949 -167 1100 0.970 -177 0.450 6 0.004 69 0.955 -167 1150 0.970 -178 0.405 1 0.005 57 0.953 -168 1200 0.970 -179 0.383 4 0.005 65 0.952 -169 1250 0.971 180 0.351 -5 0.005 56 0.959 -170 1300 0.971 179 0.330 -5 0.005 61 0.957 -170 1350 0.973 179 0.308 -5 0.005 52 0.963 -171 1400 0.973 179 0.255 -3 0.006 59 0.965 -171 1450 0.972 179 0.219 5 0.006 58 0.965 -171 1500 0.965 179 0.210 -8 0.006 62 0.957 -172

Test Circuit Schematic for f = 960 MHz DUT PTF 10015 l1 .140 l 960 MHz Microstrip 50 W l2 .270 l 960 MHz Microstrip 50 W l3 .185 l 960 MHz Microstrip 6.2 W l4 .225 l 960 MHz Microstrip 11.0 W l5 .040 l 960 MHz Microstrip 50 W l6 .330 l 960 MHz Microstrip 50 W C1, C5 0.3-3.5 pF, Variable Capacitor, Johanson C2, C4, C6, C9 36 pF, Capacitor ATC 100 B C3 0.01 mF, Capacitor ATC 10,000 B C7 0.1 mF, 50 V, Capacitor Digi-Key P4917-ND C8 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 L1 4 Turn, #20 AWG, .120” I.D. R1, R2, R3 220 W, 1/4 W Resistor Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Placement Diagram (not to scale)

Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTF 10015 Uen Rev. A 04-01-99 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower