PTF10111 ERICSSON | Alldatasheet
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e PTF 10111 6 Watts, 1.5 GHz GOLDMOS ™ Field Effect Transistor 10111 A-1234569820 Input Power (Watts) Output Power (Watts) VDD = 28V IDQ = 75 mA f = 1.5 GHz Typical Output Power vs. Input Power Package 20222
- Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ
- Full Gold Metallization
- Silicon Nitride Passivated
- 100% Lot Traceability
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation at Tflange = 25°C P D 36 Watts Above 25°C derate by 0.208 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R qJC 4.8 °C/W
e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 40 mA V (BR)DSS 65 68 — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V I DSS —— 1 m A Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 0.5 A g fs — 0.2 — Siemens RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Common Source Power Gain (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) G ps 15.0 16 — dB Power Output at 1 dB Compressed DD = 28 V, IDQ = 75 mA, f = 1.5 GHz) P-1dB 6 7 — W atts Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) hD 45 50 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz— Y — — 30:1 — all phase angles at frequency of test) Typical Performance 1300 1400 1500 1600 1700 Frequency (MHz) Gain (dB) Output Power & Efficiency VDD = 28 V IDQ = 75 mA Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output P ower (W) E fficiency (%) Gain Broadband Test Fixture Performance 1450 1475 1500 1525 1550 Frequency (MHz) Gain (dB) VDD = 28 V IDQ = 75 mA POUT = 6 W Gain (dB) Return Loss (dB) E fficiency (%) Efficiency (%)Return Loss (dB)- 5 -15 -25 -35
Output Power vs. Supply Voltage 22 24 26 28 30 32 34 Supply Voltage (Volts) Output Power (Watts) IDQ = 75 mA f = 1500 MHz -70 -60 -50 -40 -30 -20 -10 012345678 Output Power (Watts-PEP) IMD (dBc) VDD = 28 V IDQ = 75 mA f1 = 1500.0 MHz f2 = 1500.1 MHz Intermodulation Distortion vs. Output Power IM3 IM7 IM5 Power Gain vs . Output Power 0.0 0.1 1.0 10.0 Output Power (Watts) Power Gain (dB) VDD = 28 V f = 1.5 Hz IDQ = 75 mA IDQ = 38 mA IDQ = 19 mA Capacitance vs. Supply Voltage 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss Cgs Cds Crss VGS = 0 V f = 1 MHz Bias Voltage vs . Temperature 0.96 0.97 0.98 0.99 1.01 1.02 1.03 -20 30 80 130 Temp. (°C) Bias Voltage (V) 0.05 0.145 0.24 0.335 0.43 0.525 Voltage normalized to 1.0 V Series show current (A)
e Typical Scattering Parameters (VDS = 28 V, ID = 300 mA) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 100 0.867 -65 21.8 131 0.010 42 0.801 -41 200 0.832 -77 19.2 123 0.011 34 0.765 -50 300 0.843 -106 14.4 97 0.013 18 0.740 -72 400 0.844 -123 11.0 81 0.014 4 0.744 -88 500 0.852 -133 8.71 69 0.013 -7 0.774 -98 600 0.862 -140 7.08 59 0.011 -15 0.815 -107 700 0.868 -146 5.79 50 0.009 -19 0.836 -116 800 0.874 -151 4.80 42 0.007 -19 0.851 -123 900 0.882 -155 4.05 35 0.006 -16 0.861 -129 1000 0.886 -158 3.48 29 0.004 -7 0.869 -133 1100 0.893 -161 3.04 24 0.003 20 0.885 -137 1200 0.899 -164 2.69 19 0.003 57 0.897 -141 1300 0.907 -167 2.43 14 0.005 74 0.912 -145 1400 0.905 -170 2.19 9 0.007 80 0.921 -148 1500 0.903 -173 2.00 4 0.008 83 0.928 -151 1600 0.898 -175 1.83 0 0.011 85 0.929 -154 1700 0.896 -177 1.71 -5 0.013 86 0.933 -157 1800 0.892 -179 1.60 -9 0.016 83 0.934 -159 1900 0.889 178 1.52 -13 0.020 78 0.937 -161 2000 0.885 176 1.45 -17 0.023 69 0.940 -163 2100 0.882 173 1.40 -21 0.023 59 0.944 -165 2200 0.880 171 1.37 -25 0.021 60 0.950 -168 Frequency Z Source W Z Load W GHz R jX R jX Z Source Z Load G S D Impedance Data (VDD = 28 V, IDQ = 75 mA, POUT = 6 W) Z0 = 50 W
Placement Diagram (not to scale) Test Circuit Test Circuit Block Diagram for f = 1.5 GHz DUT PTF 10111 C1, C7–9 33 pF, Capacitor ATC 100 B C2, C3 2.2 pF, Capacitor ATC 200 B C10, C11 0.1 mF, 50 V, Capacitor C4, C5 1.5 pF, Capacitor ATC 100 A C6 2.0 pF, Capacitor ATC 100 A C12 100 mF, 50 V, Electrolytic Capacitor l1 0.21 l 1.5 GHz Microstrip 50 W l2 0.037 l 1.5 GHz Microstrip 33.3 W l3 0.045 l 1.5 GHz Microstrip 18.5 W l4 0.13 l 1.5 GHz Microstrip 12.4 W l5 0.07 l 1.5 GHz Microstrip 19.8 W l6 0.20 l 1.5 GHz Microstrip 22 W l1 0.18 l 1.5 GHz Microstrip 50 W L1, L2 3 Turn, #22 AWG, 0.120” I.D. R1, R2, R3 10 K, 1/4 W Resistor Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
e Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 1998 Ericsson Inc. EUS/KR 1301-PTF 10111 Uen Rev. A 02-18-99 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower