PTB20101 ERICSSON | Alldatasheet

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e Typical Gain vs. Frequency (as measured in a broadband circuit) 400 500 600 700 800 900 Frequency (MHz) Gain (dB) VCC = 28 V ICQ = 2 x 200 mA Pout = 110 W Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 40 Vdc Collector-Base Voltage V CBO 65 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 20 Adc Total Device Dissipation at Tflange = 25°C P D 330 Watts Above 25°C derate by 1.89 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 0.53 °C/W PTB 20101

175 Watts P-Sync, 470–860 MHz

Description

The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 28 Volt, 860 MHz Characteristics - Output Power = 175 Watts P-Sync - Output Power = 110 (CW) - Gain = 10.0 dB Min • 55% Collector Efficiency at 110 Watts • Class AB Characteristics • Gold Metallization • Silicon Nitride Passivated Package 20224 20101 LOT CODE 9/28/98

e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V (BR)CEO 25 30 — Volts Breakdown Voltage C to E V BE = 0 V, IC = 100 mA V (BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V (BR)EBO 3.5 5 — Volts DC Current Gain V CE = 5 V, IC = 1 A h FE 20 50 100 — Output Capacitance (per side) VCB = 28 V, IE = 0 A, f = 1 MHz C ob —8 5 — p F RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Output Power (P-Sync) (VCC = 28 Vdc, ICQ = 200 mA per side, f = 860 MHz) Pout 175 — — Watts Gain CC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, G pe 10.0 11 — dB f = 860 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, ηC 55 58 — % f = 860 MHz) Load Mismatch Tolerance (VCC = 28 Vdc, Pout = 175 W, ICQ = 200 mA per side, Ψ — — 5:1 — f = 860 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side) Frequency Z Source Z Load MHz R jX R jX 450 0.4 -1.0 2.0 0.3 550 0.5 -1.3 1.6 0.0 650 0.7 -1.8 1.3 0.0 Z Source Z Load 9/28/98

e Efficiency vs. Frequency (as measured in a broadband circuit) 400 500 600 700 800 900 Frequency (MHz) Efficiency (%) VCC = 28 V ICQ = 2 x 200 mA Pout = 110 W Typical Performance Ericsson Components RF Power Products

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Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20201 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower