PTB20081 ERICSSON | Alldatasheet

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e 7.0 7.5 8.0 8.5 9.0 9.5 10.0 470 548 626 704 782 860 Frequency (MHz) Gain (dB) VCC = 28 V ICQ = 2 x 100 mA Pout = 100 W Typical Gain vs. Frequency (as measured in a broadband circuit) PTB 20081

150 Watts, 470–860 MHz

Parameter Symbol Value Unit Collector-Emitter Voltage V CER 40 Vdc Collector-Base Voltage V CBO 65 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 12 Adc Total Device Dissipation at Tflange = 25°C P D 233 Watts Above 25°C derate by 1.33 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 0.75 °C/W 20081 LOT CODE

Description

The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 150 Watts (P-Sync), 470–860 MHz • Class AB Characteristics • 55% Collector Efficiency at 100 Watts (CW) • Guaranteed Performance at 28 Volts, 860 MHz - Output Power = 125 Watts (Peak Sync) - Output Power = 100 Watts (CW) - Minimum Gain = 8.5 dB • Guaranteed Performance at 32 Volts, 860 MHz - Output Power = 150 Watts (Peak Sync) Package 20212 9/28/98

e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V( BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V( BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V( BR)EBO 3.5 5 — Volts DC Current Gain V CE = 5 V, IC = 1 A h FE 20 50 100 — Output Capacitance V CB = 28 V, IE = 0 A, f = 1 MHz Cob — 45 — pF (each side) RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Power Output CC = 28 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) P out 100 110 — Watts Power Output (P-Sync.) (VCC = 28 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) P out 125 135 — Watts Power Out (P-Sync.) (VCC = 32 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) P out 150 160 — Watts Gain (VCC = 28 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 860 MHz) G pe 8.5 9.5 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 860 MHz) ηC 55 58 — % Load Mismatch Tolerance (VCC = 28 Vdc, Pout = 100 W(PEP), f = 860 MHz— Ψ — — 10:1 — all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 100 W, ICQ = 2 x 100 mA) Frequency Z Source Z Load MHz R jX R jX Z0 = 50 ΩZ Source Z Load

e Intermodulation Distortion vs. Power Output -40 -36 -32 -28 -24 -20 20 30 40 50 60 70 80 90 100 110 120 Output Power (Watts-PEP) IMD (dBc) VCC = 28 V ICQ = 2 x 100 mA f1 = 859.95 MHz f2 = 860.05 MHz Typical Performance Efficiency vs. Frequency (as measured in a broadband circuit) 470 548 626 704 782 860 Frequency (MHz) Efficiency (%) VCC = 28 V ICQ = 2 x 100 mA Pout = 100 W Ericsson Components RF Power Products

675 Jarvis Drive

Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20081 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower