PTF10009 ERICSSON | Alldatasheet

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e PTF 10009 85 Watts, 1.0 GHz GOLDMOS ™ Field Effect Transistor 10009 1234569744 100 Input Power (Watts) Output Power Efficiency VDS = 28 V IDQ = 600 mA Total f = 960 MHz Typical Output Power and Efficiency vs. Input Power Efficiency (%) Output Power (W) Package 20230

  • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ
  • Full Gold Metallization
  • Silicon Nitride Passivated
  • Excellent Thermal Stability
  • 100% lot traceability

Description

The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation P D 270 Watts Above 25°C derate by 1.54 W/°C Storage Temperature Range T STG -65 to 150 °C Thermal Resistance (TCASE = 70°C) R qJC 0.65 °C/W (1)per side All published data at TCASE = 25°C unless otherwise indicated.

Frequency Z Source W Z Load W MHz R jX R jX 860 1.76 -0.78 5.00 -1.50 900 1.80 -0.05 4.80 -0.78 960 1.58 0.69 4.24 0.36 1000 1.39 1.35 3.95 1.41 Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side) Characteristic (per side) Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V (BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V I DSS — — 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 3 A g fs — 2.8 — Siemens Dynamic Characteristics Characteristic (per side) Symbol Min Typ Max Units Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) C iss —9 0 — p F Output Capacitance DS = 28 V, VGS = 0 V, f = 1 MHz) C oss —3 6 — p F Reverse Transfer Capacitance DS = 28 V, VGS = 0 V, f = 1 MHz) C rss — 1.9 — pF RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain DD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) G ps 12.0 13.0 — dB Drain Efficiency (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) h 47 50 — % Load Mismatch Tolerance (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz— Y — — 5:1 — all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VDD = 28 V, Pout = 85 W, IDQ = 600 mA) Z Source Z Load G D G S D Z0 = 50 W

Gain vs. Power Output 5.0 7.5 10.0 12.5 15.0 17.5 20.0 0 2 04 06 08 0 1 0 0 Output Power (Watts) Gain (dB) VDS = 28 V IDQ = 600mA Total f = 960 MHz Intermodulation Distortion vs. Output Power -60 -50 -40 -30 -20 -10 0 2 04 06 08 0 1 0 0 Output Power (Watts-PEP) IMD (dBc) VDS = 28V IDQ = 600 mA Total f1 = 960.0 MHz f2 = 960.1 MHz 3rd Order 5th 7th Output Power vs. Drain-Source Voltage 100 22 24 26 28 30 32 34 Drain-Source Voltage (Volts) Output Power (Watts) IDQ = 600 mA Total f = 960 MHz Gain vs. Frequency (as measured in a broadband circuit) 900 910 920 930 940 950 960 Frequency (MHz) Gain (dB) VDS = 28 V IDQ = 600 mA Total Pout = 85 W Bias Voltage vs. Temperature 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Tem p. (°C) Bias Voltage (V) 0.43 1.25 2.08 2.9 3.71 4.53 Voltage normalized to 1.0 V Series show current (A)

Typical Scattering Parameters (VDS = 28 V, ID = 1.0 A per side) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 40 0.883 -153 33.0 93 0.014 3 0.527 -143 60 0.878 -160 21.8 85 0.013 1 0.533 -148 80 0.876 -163 16.1 80 0.012 -6 0.553 -150 100 0.884 -164 12.8 76 0.012 -13 0.574 -148 150 0.904 -165 8.21 65 0.011 -18 0.638 -148 200 0.915 -165 5.67 58 0.010 -23 0.694 -149 250 0.934 -164 4.36 51 0.010 -31 0.769 -148 300 0.947 -164 3.41 45 0.010 -31 0.792 -149 350 0.962 -163 2.78 41 0.008 -28 0.837 -150 400 0.975 -163 2.30 36 0.008 -33 0.873 -151 450 0.974 -163 1.90 33 0.006 -36 0.874 -151 500 0.977 -163 1.65 30 0.006 -52 0.912 -152 550 0.979 -164 1.44 27 0.005 -46 0.916 -154 600 0.985 -164 1.28 26 0.004 -53 0.925 -154 650 0.981 -165 1.14 22 0.003 -27 0.933 -156 700 0.980 -166 1.01 21 0.004 -18 0.933 -157 750 0.975 -167 0.924 19 0.003 -13 0.936 -158 800 0.973 -168 0.809 16 0.001 14 0.946 -160 850 0.972 -170 0.749 14 0.003 -1 0.939 -160 900 0.969 -171 0.656 12 0.003 30 0.946 -162 950 0.966 -173 0.609 14 0.002 53 0.948 -164 1000 0.969 -174 0.564 8 0.003 59 0.945 -164 1050 0.969 -176 0.526 3 0.004 56 0.949 -167 1100 0.970 -177 0.450 6 0.004 69 0.955 -167 1150 0.970 -178 0.405 1 0.005 57 0.953 -168 1200 0.970 -179 0.383 4 0.005 65 0.952 -169 1250 0.971 180 0.351 -5 0.005 56 0.959 -170 1300 0.971 179 0.330 -5 0.005 61 0.957 -170 1350 0.973 179 0.308 -5 0.005 52 0.963 -171 1400 0.973 179 0.255 -3 0.006 59 0.965 -171 1450 0.972 179 0.219 5 0.006 58 0.965 -171 1500 0.965 179 0.210 -8 0.006 62 0.957 -172

Parts Layout (not to scale) Test Circuit Schematic for f = 960 MHz DUT 10009 C1-2, C5-6, C9, C12-13, C17 33 pF, Capacitor ATC 100 B C3 11 pF, Capacitor ATC 100 B C4 6.0 pF, Variable Capacitor, JMC 5701 C7, C10 10 mF, +10 V Electrolytic Capacitor C8, C11, C14, C18 0.01 mF, Capacitor ATC 100 B C15, C16, C19, C20 10 mF, +30 V Electrolytic Capacitor L1. L2 4 Turn, #20 AWG, .120” I.D. R1, R2, R4, R5 1.0 K, W Resistor R3, R6 5.1 K, 1/4 W Resistor l1, l22 50 W, .030 l l2, l21 20 W, .080 l l3, l20 32 W, .191 l l4, l19 25 W, .500 l l5, l6 25 W, .091 l l7, l10 7 W, .056 l l8, l9 13.0 W, .017 l l11, l12 13.0 W, .017 l l13, l14 7.0 W, .064 l l15, l16 10.0 W, .029 l l17, l18 19.0 W, .028 l Circuit Board .031" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper

Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTF 10009 Uen Rev. B 02-16-00 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower