PTF10019 ERICSSON | Alldatasheet

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e RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) G pe 13.0 14.5 — dB Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 960 MHz) P-1dB 70 75 — Watts Drain Efficiency (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) h 45 50 — % Load Mismatch Tolerance (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz Y — — 10:1 — —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.

Description

The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. PTF 10019

70 Watts, 860–960 MHz

GOLDMOS ™ Field Effect Transistor 10019A-1234568955 Input Power (Watts) Typical Output Power vs. Input Power VDD = 28 V IDQ = 600 mA f = 960 MHz Output Power Efficiency Output Power (Watts) Efficiency (%) Package 20237

  • INTERNALLY MATCHED
  • Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ
  • Full Gold Metallization
  • Silicon Nitride Passivated
  • Excellent Thermal Stability
  • 100% Lot Traceability

Frequency (MHz) Power Gain @ P-1dB Typical POUT , Gain, and Efficiency (at P-1 dB) vs. Frequency Output Power and Efficiency Output Power (W) Power Gain (dB) Efficiency (%) Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V (BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 26 V, VGS = 0 V I DSS — — 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 3 A g fs — 3.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation P D 215 Watts Above 25°C derate by 1.25 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C) R qJC 0.8 °C/W Typical Performance Broadband Test Fixture Performance 900 915 930 945 960 Frequency (MHz) Gain Return Loss (dB) Gain (dB) Efficiency (%) EfficiencyReturn Loss- 5 -15 -25 VDD = 28 V, IDQ = 600 mA, POUT = 70 W

Power Gain vs. Output Power 0.1 1.0 10.0 100.0 Output Power (Watts) Gain (dB) IDQ = 600 mA IDQ = 300 mA IDQ = 150 mA 23 25 27 29 31 33 Drain-Source Voltage (Volts) Output Power (Watts) f = 960 MHz IDQ = 600 mA Output Power (at P-1dB) vs. Supply Voltage -60 -50 -40 -30 -20 -10 0 1 02 03 04 05 06 07 08 0 Output Power (Watts-PEP) IMD (dBc) 3rd Order 7th 5th VDD = 28 V IDQ = 600 mA f1 = 959.900 MHz f2 = 960.000 MHz Intermodulation Distortion vs. Output Power Capacitance vs. Voltage * 100 120 140 160 180 200 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss (pF) C gs C ds C rss VGS = 0 V f = 1 MHz * This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 0.94 0.96 0.98 1.00 1.02 1.04 -20 30 80 130 Tem p. (°C) Bias Voltage (V) 0.40 1.32 2.25 3.17 4.09 5.02 Voltage normalized to 1.0 V Series show current (A)

Test Circuit Schematic for f = 960 MHz DUT PTF 10019 LDMOS Field Effect Transistor l1, l6 Microstrip 50 W l2 0.125 l 960 GHz Microstrip 50 W l3 0.186 l 960 GHz Microstrip 10 W l4 0.200 l 960 GHz Microstrip 7.5 W l5 0.060 l 960 GHz Microstrip 50 W C1, C2, C4, C6 36 pF Chip Cap ATC 100 B C3 3.6 pF Chip Cap ATC 100 A C5 0.01 mF Capacitor Digi-Key P4917-ND C7 50 mF, 35 V Electrolytic Capacitor, Digi-Key P5276 C8 1.7 pF Chip Cap ATC 100 B L1 4 Turn, #20 AWG, .120"I.D. R1, R2, R3 220 W, 1/4 W Resistor R4 10K W, 1/4 W Resistor Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Frequency Z Source W Z Load W MHz R jX R jX 840 0.9 0 2.3 1.7 860 1.0 -0.2 2.0 1.6 900 1.2 -0.4 1.8 1.6 920 1.2 -0.4 1.7 1.6 960 1.8 -0.7 1.6 1.7 980 2.2 -0.6 1.6 1.8 Z Source Z Load G S D Impedance Data (VDD = 28 V, Pout = 70 W, IDQ = 600 mA) Z0 = 10 W

Components Layout (not to scale) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 1997 Ericsson Inc. EUS/KR 1301-PTF 10019 Uen Rev. A 10-22-99 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower 10019 Artwork (1 inch )

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