PTB20004 ERICSSON | Alldatasheet
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e 02468 1 0 Input Power (Watts) Output Power (Watts) VCC = 25 V ICQ = 200 mA f = 900 MHz Typical Output Power vs. Input Power Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 40 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 10.0 Adc Total Device Dissipation at Tflange = 25°C P D 175 Watts Above 25°C derate by 1.0 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 1.0 °C/W PTB 20004
50 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 50 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 50 Watts Gold Metallization Silicon Nitride Passivated Package 20200 20004 LOT CODE 9/28/98
e Z Source Z Load Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V (BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V (BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V (BR)EBO 3.5 5 — Volts DC Current Gain V CE = 5 V, IC = 1 A h FE 20 50 100 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA, f = 900 MHz) G pe 8.0 9.5 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA, f = 900 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 25 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, IMD — -21 — dBc f1 = 899 MHz, f2 = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA Ψ — — 10:1 — f = 900 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 50 W, ICQ = 200 mA) Frequency Z Source Z Load MHz R jX R jX
e Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 840 855 870 885 900 915 Frequency (MHz) Gain (dB) Efficiency (%) VCC = 25 V ICQ = 200 mA Pout = 50 W Gain (dB) Efficiency (%) Typical Performance Ericsson Components RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20004 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower