PTF10021 ERICSSON | Alldatasheet

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e RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f = 1.5 GHz) G ps 11.0 13.0 — dB Power Output at 1 dB Compressed DD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) P-1dB 30 — — Watts Drain Efficiency DD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) h 45 48 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W(PEP), IDQ = 360 mA, f = 1.5 GHz— Y — — 10:1 — all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.

  • INTERNALLY MATCHED
  • Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ
  • Full Gold Metallization
  • Silicon Nitride Passivated
  • Excellent Thermal Stability
  • 100% Lot Traceability PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS ™ Field Effect Transistor 10021 A-1234569813 012345 Input Power (Watts) Output Power (Watts) VDD = 28 V IDQ = 360 mA f = 1.5 GHz Typical Output Power vs. Input Power Package 20237

Description

The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V (BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V I DSS — — 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 3 A g fs — 2.2 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation at P D 105 Watts Above 25°C derate by 0.6 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C) R qJC 1.65 °C/W Typical Performance 1300 1400 1500 1600 1700 Frequency (MHz) Gain Output Power & Efficiency VDD = 28 V IDQ = 360 mA Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Efficiency (%) Gain (dB) Broadband Test Fixture Performance 1400 1450 1500 1550 1600 Frequency (MHz) Gain (dB) VDD = 28 V IDQ = 360 mA POUT = 10 W Gain (dB) Return Loss (dB) Efficiency (%) Efficiency (%)Return Loss (dB)- 5 -15 -25 -35

e Output Power vs. Supply Voltage 22 24 26 28 30 32 34 Supply Voltage (Volts) Output Power (Watts) IDQ = 360 mA f = 1.5 GHz Power Gain vs. Output Power 0.1 1.0 10.0 100.0 Output Power (Watts) Power Gain (dB) VDD = 28 V f = 1.5 GHz IDQ = 360 mA IDQ = 180 mA IDQ = 90 mA Intermodulation Distortion vs. Output Power -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 35 40 Output Power (Watts-PEP) IMD (dBc) VDD = 28 V IDQ = 360 mA f1 = 1.499 GHz f2 = 1.500 GHz 3rd Order 7th 5th Capacitance vs. Supply Voltage * 100 120 01 0 2 0 3 0 4 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss (pF) C gsC ds C rss VGS =0 V f = 1 MHz Bias Voltage vs. Temperature 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Temp. (°C) Bias Voltage (V) 0.3 0.87 1.44 2.01 2.58 3.15 Voltage normalized to 1.0 V Series show current (A) *This part is internally matched. Measurements of the finished product will not yield these figures.

e Typical Scattering Parameters (VDS = 28 V, ID = 900 mA) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang Frequency Z Source W Z Load W GHz R jX R jX Z Source Z Load G S D Impedance Data VDD = 28 V, POUT = 30 W, IDQ = 360 mA Z0 = 10 W

e Placement Diagram (not to scale) Q1 PTF 10021 Field Effect Transistor l1 0.11 l 1.5 GHz Microstrip 30.21 W l2 0.0483 l 1.5 GHz Microstrip 11.69 W l3 0.07 l 1.5 GHz Microstrip 70 W l4 0.0853 l 1.5 GHz Microstrip 11.69 W l5 0.07 l 1.5 GHz Microstrip 21 W l6 0.25 l 1.5 GHz Microstrip 70 W C1 33 pF Chip Cap ATC 100 B C2 1.3 pF Chip Cap ATC 100 B C3 0.7 pF Chip Cap ATC 100 B C4, C5 33 pF Chip Cap ATC 100 B C6 10 uF SMT Tantalum C7 0.1 uF Chip Cap C8 33 pF Chip Cap ATC 100 B C9 0.1 uF Chip Cap C10 10 uF SMT Tantalum L1 2.7 nH SMT Coil L2 4mm Ferrite Bead R1 220 W K 1206 SMT R2 220 W K 1206 SMT R3 2 K W SMT Pot R4 470 W K 1206 SMT R5 2.2 W K 1206 SMt Circuit Board .028" Dielectric Thickness, Circuit Board er = 4.0, AlliedSignal, G200, 2 oz. copper Test Circuit Schematic for f = 1.5 GHz

e Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 1997 Ericsson Inc. EUS/KR 1301-PTF 10021 Uen Rev. A 11-23-98 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower