PTF102028 ERICSSON | Alldatasheet

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/G101 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Common Source Power Gain (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) G ps 14 15 — dB Power Output at 1 dB Compression DD = 26 V, IDQ = 130 mA, f = 960 MHz) P-1dB 18 20 — Watts Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) /G104 50 55 — % Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz— /G89 — — 5:1 — all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. PTF 102028

18 Watts, 860–960 MHz

GOLDMOS® Field Effect Transistor Input Power (Watts) Output Power (Watts) Efficiency (%) x VDD = 26 V IDQ = 130 mA f = 960 MHz Typical Output Power & Efficiency vs. Input Power Output Pow er E fficiency 102028 1234569855A Package 20251

Description

The PTF 102028 is an 18–watt GOLDMOS FET intended for large sig- nal amplifier applications 860 to 960 MHz. It operates with 55% effi- ciency and 15 dB gain. Nitride surface passivation and full gold metalli- zation ensure excellent device lifetime and reliability.  Performance at 960 MHz, 26 Volts - Output Power = 18 Watts Min - Power Gain = 15 dB Typ - Efficiency = 55% Typ  Full Gold Metallization  Silicon Nitride Passivated  Excellent Thermal Stability  Back Side Common Source  100% Lot Traceability

/G101 860 880 900 920 940 960 Frequency (MHz) Efficiency (%) x VDD = 26 V IDQ = 130 mA Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Pow er E fficiency Gain Gain (dB) & Output Power (W)x Broadband Test Fixture Performance 920 930 940 950 960 Frequency (MHz) Gain Gain (dB) Return Loss (dB) E fficiency (%) EfficiencyReturn Loss - 5 -10 -15 -20 -25 VDD = 26 V IDQ = 130 mA POUT = 18 W Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage V GS = 0 V, ID = 25 mA V (BR)DSS 65 —— Volts Drain-Source Leakage Current V DS = 28 V, VGS = 0 V I DSS —— 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 0.5 A g fs — 0.9 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation P D 58 Watts Above 25°C derate by 0.33 W/ °C Storage Temperature T STG 150 °C Thermal Resistance (TCASE = 70°C) R /G113JC 3.0 °C/W Typical Performance

/G101 Power Gain vs. Output Power 0.1 1.0 10.0 100.0 Output Power (Watts) X Power Gain (dB) X VDD = 26 V f = 960 MHz IDQ = 130 IDQ = 65 mA IDQ = 35 mA 22 27 32 37 Supply Voltage (Volts) X Output Power (Watts) X IDQ = 130 mA f = 960 MHz Output Power (at 1 dB Compression) vs. Supply Voltage -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 Output Power (Watts-PEP) X IMD (dBc) X VDD = 26 V IDQ = 130 mA f1 = 959.900 MHz f2 =960.000 MHz Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) 3rd Order 7th 5th Capacitance vs. Supply Voltage 0 1 02 03 04 0 Supply Voltage (Volts) x Cds and Cgs (pF) x Crss (pF) x Cgs Cds Crss VGS = 0 V f = 1 MHz Bias Voltage vs . Temperature 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Temp. (°C) Bias Voltage (V) x 0.075 0.33 0.585 0.84 1.095 1.35 Voltage normalized to 1.0 V Series show current (A)

/G101 0.1 0.2 0.1 0.2 0.1 OW ARD G ENERATOR ---> VELENGTHS TO W ARD LO AD - 0.0 960 MHz

860 MHz

960 MHz

Frequency Z Source /G87 Z Load /G87 MHz R jX R jX 860 2.0 2.7 5.8 4.4 880 2.0 2.6 5.5 4.6 900 2.0 2.4 5.0 5.0 920 1.9 2.3 4.8 5.1 960 1.9 2.1 4.7 5.3 Z0 = 50 /G87 Z Source Z Load G S D Impedance Data VDD = 26 V, POUT = 18 W, IDQ = 130 mA

/G101 Typical Scattering Parameters (VDS = 26 V, ID = 500 mA) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang

/G101 Test Circuit Test Circuit Schematic for f = 960 MHz DUT PTF 102028 /G1081 0.098/G32/G108/G32960 MHz Microstrip 50 /G87 /G1082 0.050 /G108/G32960 MHz Microstrip 8.4 /G87 /G1083 0.139/G32/G108 960 MHz Microstrip 8.4 /G87 /G1084 0.256/G32/G108 960 MHz Microstrip 13.9 /G87 /G1085 0.040/G32/G108/G32960 MHz Microstrip 50 /G87 Assembly Diagram (not to scale) C1, C2, C4, C8 Capacitor, 36 pF ATC 100 B C3 Capacitor, 4.7 pF ATC 100 B C5 Capacitor, 0.1, µF, 50 V Digi-Key P4525-ND C6 Capacitor, 100 µF, 50 V Digi-Key P5182-ND C7 Capacitor, 0.3 pF, 50 V ATC 100 B J1, J2 Connector, SMA, Female, Panel Mount Ericsson, # RPM 513 412/53 L1 4 Turns, 20 AWG, .120 Dia I.D. N/A R1, R2, R3 Resistor, 220 ohm Digi-Key 2.2 QBK Circuit Board .031 “ Thick, /G101r = 4.0, AlliedSignal, G200, 2 oz. copper J1 J2

/G101 Case Outline Specifications Package 20251 Test Circuit Artwork ( not to scale ) Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 2000 Ericsson Inc. EUS/KR 1522-PTF 102028 Uen Rev. A 11-29-00 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower