PTF102027 ERICSSON | Alldatasheet
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/G101 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) G pe 14.5 15 — dB Power Output at 1 dB Compression DD = 26 V, IDQ = 250 mA, f = 960 MHz) P-1dB 40 45 — Watts Drain Efficiency DD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) /G104 40 53 — % Load Mismatch Tolerance (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz /G89 10:1 — — — —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Description
The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability. PTF 102027
40 Watts, 925–960 MHz
GOLDMOS® Field Effect Transistor 102027 1234560050 Input Power (Watts) Power Output (Watts) Efficiency (%) VDD = 26 V IDQ = 250 mA f = 960 MHz Typical Power Output and Efficiency vs. Input Power Efficiency Power Output Package 20222 Performance at 960 MHz, 26 Volts - Output Power = 40 Watts - Power Gain = 15.0 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability
925 930 935 940 945 950 955 960 Frequency (MHz) Gain VDD = 26 V IDQ = 250 mA Output Power (W) Efficiency (%) Gain (dB) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power & Efficiency Broadband Test Fixture Performance 925 930 935 940 945 950 955 960 Frequency (MHz) Gain (dB) -10 VDD = 26 V IDQ = 250 mA POUT = 40 W Gain Return Loss (dB) Efficiency Efficiency (%)Return Loss -15 -30 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage V GS = 0 V, ID = 25 mA V (BR)DSS 65 —— Volts Drain-Source Leakage Current V DS = 26 V, VGS = 0 V I DSS —— 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 100 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 5 V, ID = 3 A g fs — 2.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation P D 125 Watts Above 25°C derate by 0.714 W/ °C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C) R /G113JC 1.4 °C/W Typical Performance
Supply Voltage (Volts) Output Power (Watts) IDQ = 250 mA f = 960 MHz Output Power vs. Supply Voltage Power Gain vs. Output Power 0 1 10 100 1000 Output Power (Watts) Power Gain (dB) VDD = 26 V f = 960 MHz IDQ = 250 mA IDQ = 325 mA IDQ = 175 mA -70 -60 -50 -40 -30 -20 0 5 10 15 20 25 30 35 40 45 50 Output Power (Watts-PEP) IMD (dBc) VDD = 26 V, IDQ = 250 mA f1 = 959 MHz, f2 = 960 MHz Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) 3rd Order 7th 5th Capacitance vs. Supply Voltage 100 120 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss Cgs Cds Crss VGS = 0 V f = 1 MHz 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 Case Temperature (°C) Bias Voltage (V)0.200 0.692 1.183 1.675 2.167 2.658 Voltage normalized to 1.0 V Series show current (A) Gate-Source Voltage vs. Case Temperature
Test Circuit Schematic for f = 960 MHz DUT PTF 102027 LDMOS Transistor /G108 1, /G108 9 0.169 /G108 960 MHz Microstrip 50 /G87 /G108 2 0.020 /G108 960 MHz Microstrip 50 /G87 /G108 3 0.079 /G108 960 MHz Microstrip 50 /G87 /G108 4 0.158 /G108 960 MHz Microstrip 7.0 /G87 /G108 5, /G108 6 0.016 /G108 960 MHz Microstrip 7.0 /G87 /G108 7 0.095 /G108 960 MHz Microstrip 10 /G87 /G108 8 0.150 /G108 960 MHz Microstrip 10 /G87 /G108 10 0.047 /G108 960 MHz Microstrip 50 /G87 /G108 11 0.118 /G108 960 MHz Microstrip 50 /G87 /G108 12 0.254 /G108 960 MHz Microstrip 50 /G87 /G108 13 0.315 /G108 960 MHz Microstrip 85 /G87 Frequency Z Source /G87 Z Load /G87 MHz R jX R jX 925 0.770 1.98 2.64 1.28 930 0.750 2.09 2.60 1.38 940 0.700 2.10 2.50 1.57 950 0.650 2.20 2.43 1.78 960 0.625 2.32 2.40 1.98 Test Circuit Z Source Z Load G S D Impedance Data VDD = 26 V, POUT = 40 W, IDQ = 250 mA Z0 = 10 /G87 C1, C8 Capacitor, 0.1 µF, 50V Digi-Key P4525-ND C2, C3, C9, C12 Capacitor, 36 pF 100B 360 C6, C13 Capacitor, 3.6 pF 100B 3R6 C4, C14 Capacitor, 3.3 pF 100B 3R3 C5, C7 Capacitor, 11 pF 100B 110 C10 Capacitor, 100 µF, 50 V Digi-Key P5182-ND C11 Capacitor, 5.1 pF 100B 5R1 J1, J2 Connector, SMA, Female, Panel Mount Ericsson, #Rpm 513 412/53 R1, R2, R3 Resistor, 220 ohm, 1/4W Digi-Key 220QBK-ND PCB .031 ” Thick, 2 Oz Copper Both Sides AlliedSignal, G200
Assembly Diagram (not to scale) Artwork (not to scale) 10007_A INPUT ERICSSON ERICSSO N 10007_A OUTPUT102027_A INPUT 102027_A OUTPUT
Case Outline Specifications Package 20222 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 102027 Uen Rev. A 01-30-01 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower