PTF10135 ERICSSON | Alldatasheet

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e PTF 10135 5 Watts, 2.0 GHz GOLDMOS ™ Field Effect Transistor Package 20249 Input Power (Watts) Output Power (Watts) VDD = 26 V IDQ = 70 mA f = 2000 MHz Typical Output Power vs. Input Power

Description

The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min • Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • Excellent Thermal Stability Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation at Tflange = 25°C P D 39 Watts Above 25°C derate by 0.22 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R qJC 4.5 °C/W 10135 A-1234569953

Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA V (BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 26 V, VGS = 0 V I DSS — — 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 2 A g fs — 0.8 — Siemens RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) G ps 11 — — dB Power Output at 1 dB Compression DD = 26 V, IDQ = 70 mA, f = 1.99 GHz) P-1dB 5 — — Watts Drain Efficiency DD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz) hD 40 — — % Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz Y — — 10:1 — —all phase angles at frequency of test) Typical Performance 1700 1800 1900 2000 2100 Frequency (MHz) Gain Output Power & Efficiency VDD = 26 V IDQ = 70 mA Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output P ow er (W) E fficiency (%)Gain (dB) Broadband Test Fixture Performance 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) Gain (dB) VDD = 26 V IDQ = 70 mA POUT = 4 W Gain (dB) Return Loss (dB) E fficiency (%) EfficiencyReturn Loss

Output Power vs. Supply Voltage 22 24 26 28 30 32 34 Supply Voltage (Volts) Output Power (Watts) IDQ = 70 mA f = 2000 MHz -70 -60 -50 -40 -30 -20 -10 0123456 Output Power (Watts-PEP) IMD (dBc) VDD = 26 V, IDQ = 70 mA f1 = 1999.9 MHz, f2 = 2000.0 MHz Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) 3rd Order 7th 5th Gain vs . Gate Voltage 23456 Gate-Source Voltage (Volts) Power Gain (dB) VDD = 26 V PIN = 0.05 W f = 2.0 G H z f = 1.9 Capacitance vs. Supply Voltage 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Crss (pF) Cgs Cds Crss VGS = 0 V f = 1 MHz Bias Voltage vs . Temperature 0.96 0.97 0.98 0.99 1.01 1.02 1.03 -20 30 80 130 Temp. (°C) Bias Voltage (V) 0.05 0.145 0.24 0.335 0.43 0.525 Voltage normalized to 1.0 V Series show current (A)

Typical Scattering Parameters (VDS = 26 V, IDQ = 300 mA) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 100 0.874 -58 24.1 137 0.009 46 0.770 -35 Impedance Data VDD = 26 V, POUT = 5 W, IDQ = 70 mA 0.1 0.3 0.2 0.4 0.1 0.2 0.1 0.3 0.2 - W AVELENGTHS TOW ARD GENERATOR ---> 0.05 <--- W AVELENG THS TOW ARD LO AD - 0.0

1.7 GHz

2.1 GHz

2.1 G H z

Z0 = 50 W Z Source Z Load G S D Frequency Z Source W Z Load W GHz R jX R jX

Block Diagram for f = 1.96 GHz Q1 PTF 10135 LDMOS RF FET l1, l2, l7 Microstrip 50 W l3 0.149 l 1.96 GHz Microstrip 10.4 W l4 0.081 l 1.96 GHz Microstrip 15.9 W l5 0.073 l 1.96 GHz Microstrip 12.1 W l6 0.06 l 1.96 GHz Microstrip 15.9 W C1, C3, C8, C9 33 pF Chip Cap C2, C5 0.7 pF Chip Cap C4 0.3–3.5 pF Variable Capacitor C6 0.3 pF Chip Cap C7, C10 0.1 mF Chip Cap C11 10 mF SMT Tantalum L1, L2 4 Turn #20 AWG, .120” I.D. R1, R2 220 W Chip Resistor K1206 R3 2K SMT Potentiometer R4 10 W Chip ResistorK1206 Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Parts Layout (not to scale)

Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 1998 Ericsson Inc. EUS/KR 1301-PTF 10135 Uen Rev. A 11-24-98 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Artwork (1 inch )